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2N1412

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size759KB,6 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N1412 Overview

Transistor,

2N1412 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Maximum collector current (IC)15 A
ConfigurationSingle
Minimum DC current gain (hFE)25
Maximum operating temperature100 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)87 W
surface mountNO
Nominal transition frequency (fT)0.01 MHz
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