2SB906
TOSHIBA Transistor Silicon PNP Diffused Type (PCT process)
2SB906
Audio Frequency Power Amplifier Application
•
•
•
Low collector saturation voltage
: V
CE (sat)
=
−1.0
V (typ.) (I
C
=
−3
A, I
B
=
−0.3
A)
High power dissipation: P
C
= 20 W (Tc = 25°C)
Complementary to 2SD1221
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−60
−60
−7
−3
−0.5
1.0
20
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
―
―
2-7J1A
Weight: 0.36 g (typ.)
1
2004-07-07
2SB906
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CEO
Test Condition
V
CB
=
−60
V, I
E
= 0
V
EB
=
−7
V, I
C
= 0
I
C
=
−50
mA, I
B
= 0
Min
―
―
−60
60
20
―
―
―
―
―
Typ.
―
―
―
―
―
−1.0
−1.0
9
90
0.4
Max
−100
−100
―
200
―
−1.7
−1.5
―
―
―
V
V
MHz
pF
Unit
µA
µA
V
DC current gain
h
FE (1)
V
CE
=
−5
V, I
C
=
−0.5
A
(Note)
h
FE (2)
V
CE
=
−5
V, I
C
=
−3
A
I
C
=
−3
A, I
B
=
−0.3
A
V
CE
=
−5
V, I
C
=
−0.5
A
V
CE
=
−5
V, I
C
=
−0.5
A
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
OUTPUT
15
Ω
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on time
V
CE (sat)
V
BE
f
T
C
ob
t
on
20 µs
I
B1
Switching time
Storage time
t
stg
INPUT
I
B2
I
B1
I
B2
―
1.7
―
µs
V
CC
=
−30
V
―
0.5
―
Fall time
t
f
−I
B1
= I
B2
= 0.2 A, DUTY CYCLE
≤
1%
Note: h
FE (1)
classification
O: 60 to 120, Y: 100 to 200
Marking
B906
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-07
2SB906
I
C
– V
CE
−4
Common emitter
1000
h
FE
– I
C
Common emitter
h
FE
Tc = 25°C
500
Tc = 100°C
300
25
−25
100
VCE =
−5
V
I
C
(A)
−3
−80
−70
−60
−50
−40
−30
Collector current
−2
−20
IB =
−10
mA
DC current gain
50
30
−1
−0.03
−0.1
−0.3
−1
−3
0
0
0
−1
−2
−3
−4
−5
Collector current I
C
(A)
Collector-emitter voltage
V
CE
(V)
V
CE (sat)
– I
C
−1
−3.0
Common emitter
−0.5
−0.3
IC/IB = 10
−2.5
Common emitter
VCE =
−5
V
I
C
– V
BE
Collector-emitter saturation voltage
V
CE (sat)
(V)
I
C
(A)
Tc = 100°C
25
−25
−2.0
Collector current
−0.1
−1.5
Tc = 100°C
25
−25
−0.05
−1.0
−0.02
−0.5
−0.03
−0.1
−0.3
−1
−3
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Collector current I
C
(A)
Base-emitter voltage
V
BE
(V)
Safe Operating Area
P
C
– Ta
24
(1) Tc = Ta infinite heat sink
−5
−10
IC max (pulsed)*
100 ms*
10 ms*
IC max (continuous)
DC operation
Tc = 25°C
−1
1 ms*
P
C
(W)
50 × 50 × 0.8 mm
(3) No heat sink
Collector power dissipation
16
12
Collector current
I
C
(A)
20
(1)
(2) Ceramic substrate
−3
−0.5
−0.3
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VCEO max
−30
−100
8
4
(2)
(3)
0
0
25
50
75
100
125
150
175
−0.1
−1
−3
−10
Ambient temperature
Ta
(°C)
Collector-emitter voltage
V
CE
(V)
3
2004-07-07
2SB906
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
030619EAA
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2004-07-07
Power technology
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