JAN2N2219L datasheet, PDF - EEWORLD Datasheet

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JAN2N2219L: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5AA, TO-5AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size57KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JAN2N2219L Overview

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5AA, TO-5AA, 3 PIN

JAN2N2219L Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1952595662
Parts packaging code	TO-5AA
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-5AA
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
Guideline	MIL-19500/251
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	300 ns
Maximum opening time (tons)	35 ns

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TECHNICAL DATA

NPN SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/251

Devices

2N2218

2N2218A

2N2218AL

2N2219

2N2219A

2N2219AL

Qualified Level

JAN

JANTX

JANTXV

JANS

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

@ T

A

= +25

0

C

(1)

@ T

C

= +25

0

C

(2)

Operating & Storage Junction Temp. Range

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

T

op

,

T

stg

2N2218

2N2219

30

60

5.0

2N2218A; L

2N2219A; L

50

75

6.0

Unit

Vdc

mAdc

W

0

C

Unit

C/W

800

0.8

3.0

-55 to +200

Max.

59

TO- 39* (TO-205AD)

2N2218, 2N2218A

2N2219, 2N2219A

THERMAL CHARACTERISTICS

Characteristics

Symbol

Thermal Resistance, Junction-to-Case

R

θ

JC

0

1) Derate linearly 4.6 mW/ C above T

A

> +25 C

2) Derate linearly 17.0 mW/

0

C above T

C

> +25

0

C

0

TO-5*

2N2218AL,

2N2219AL

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

E

= 10 mAdc

Emitter-Base Cutoff Current

V

EB

= 5.0 Vdc

V

EB

= 6.0 Vdc

V

EB

= 4.0 Vdc

Collector-Base Cutoff Current

V

CE

= 30 Vdc

V

CE

= 50 Vdc

2N2218; 2N2219

2N2218A; L; 2N2219A; L

2N2218; 2N2219

2N2218A; L; 2N2219A; L

All Types

2N2218; 2N2219

2N2218A; L; 2N2219A; L

V

(BR)CEO

30

50

10

Vdc

I

EBO

µAdc

ηAdc

I

CES

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

JAN2N2219L Related Products

	JAN2N2219L	JAN2N2218L
Description	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5AA, TO-5AA, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5AA, TO-5AA, 3 PIN
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Objectid	1952595662	1952595661
Parts packaging code	TO-5AA	TO-5AA
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	20
JEDEC-95 code	TO-5AA	TO-5AA
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
Guideline	MIL-19500/251	MIL-19500/251
surface mount	NO	NO
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	300 ns	300 ns
Maximum opening time (tons)	35 ns	35 ns

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