Ordering number : EN2555B
2SB1302
SANYO Semiconductors
DATA SHEET
2SB1302
Applications
•
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
DC-DC converters, motor drivers, relay drivers, lamp drivers.
Features
•
•
•
•
•
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
2
✕0.8mm)
Conditions
Ratings
--25
--20
--5
--5
--8
1.3
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
Marking : BJ
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
31710EA TK IM / 10904TN (KT)/O1598HA (KT)/D2680MO/4097TA, TS No.2555-1/4
2SB1302
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=-
-20V, IE=0A
VEB=-
-4V, IC=0A
VCE=-
-2V, IC=--500mA
VCE=-
-2V, IC=-
-4A
VCE=-
-5V, IC=--200mA
VCB=-
-10V, f=1MHz
IC=-
-3A, IB=--60mA
IC=-
-3A, IB=--60mA
IC=-
-10μA, IE=0A
IC=-
-1mA, RBE=∞
IE=--10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--25
--20
--5
40
200
10
100*
60
320
60
--250
-
-1.0
--500
--1.3
MHz
pF
mV
V
V
V
V
ns
ns
ns
Ratings
min
typ
max
--500
--500
400*
Unit
nA
nA
*:
The 2SB1302 is classified by 500mA hFE as follows:
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
Package Dimensions
unit : mm (typ)
7007B-004
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100μF
VBE=5V
+
470μF
VCC= --10V
RB
RL
IC=10IB1= --10IB2= --2A
No.2555-2/4
2SB1302
--5
IC -- VCE
From top
--100mA
--90mA
--80mA
--70mA
--60mA
A
--50m
--40mA
--5
IC -- VCE
m
--40
A
--35mA
--30mA
Collector Current, IC -- A
Collector Current, IC -- A
--4
--4
--30mA
--20mA
--25mA
--3
--3
--20mA
--15mA
--2
--2
--10mA
--1
--10mA
--5mA
--1
0
0
--0.2
--0.4
--0.6
IB=0mA
--0.8
--1.0
0
0
IB=0mA
--1
--2
--3
--4
--5
ITR09568
Collector-to-Emitter Voltage, VCE -- V
ITR09567
--6
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
1000
hFE -- IC
VCE=
--2V
--5
7
5
VCE=
--2V
Collector Current, IC -- A
25
°
C
DC Current Gain, hFE
--4
3
2
Ta=75
°C
--3
Ta=75
°
C
25
°
C
--25
°
C
--25
°
C
100
7
5
--2
--1
3
0
0
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
7 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
ITR09570
Base-to-Emitter Voltage, VBE -- V
1000
ITR09569
3
2
f T -- IC
Collector Current, IC -- A
Cob -- VCB
VCE=
--5V
f=1MHz
Gain-Brandwidth Product, f T -- MHz
7
5
Output Capacitance, Cob -- pF
3
2
100
7
5
100
7
5
3
7
--
0.01
3
2
10
2 3
5 7
--
0.1
2
3
5
7
--
1.0
2
3
5
7
--
10
3
5
Collector Current, IC -- A
--1000
ITR09571
--10
7
5
VCE(sat) -- IC
7
--
10
7
--
1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
2
3
ITR09572
VBE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
3
2
IC / IB=50
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
--100
7
5
3
2
--1.0
7
5
Ta=
--25
°
C
25
°
C
Ta=
--25
°
C
25
°
C
7 --0.01
2
3
75
°
C
75
°
C
--10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
3
Collector Current, IC -- A
5 7 --10
ITR09573
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
5 7 --10
ITR09574
No.2555-3/4
2SB1302
2
--10
7
ASO
ICP=
--8A
1.8
1.4
PC -- Ta
Collector Current, IC -- A
5
3
2
--1.0
7
5
3
2
--0.1
7
5
2
Collector Dissipation, PC -- W
IC=
--5A
1.2
1.0
0.8
0.6
0.4
0.2
0
0
M
ou
nt
ed
s
1m
ms
10
ms
0
10
on
DC
ac
op
era
er
am
ic
tio
n
bo
ar
d(
25
0m
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm
2
✕0.8mm)
3
5
7 --1.0
2
3
5
7
--10
2
3
m
2
✕
0
.8m
m
)
160
20
40
60
80
100
120
140
Collector-to-Emitter Voltage, VCE -- V
ITR09575
Ambient Temperature, Ta --
°C
ITR09576
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.2555-4/4