2SC3940Q datasheet, PDF - EEWORLD Datasheet

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2SC3940Q: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, TO-92NL-A1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size56KB，4 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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2SC3940Q Overview

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, TO-92NL-A1, 3 PIN

2SC3940Q Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	85
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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Transistor

2SC3940, 2SC3940A

Silicon NPN epitaxial planer type

For low-frequency output amplification and driver amplification

Complementary to 2SA1534 and 2SA1534A

5.0±0.2

4.0±0.2

Unit: mm

Features

0.7±0.2

Low collector to emitter saturation voltage V

CE(sat)

Allowing supply with the radial taping.

Parameter

Collector to

base voltage

Collector to

2SC3940

2SC3940A

2SC3940

Symbol

CBO

CEO

EBO

stg

Ratings

1.5

150

–55 ~ +150

Unit

0.45

–0.1

+0.15

13.5±0.5

Absolute Maximum Ratings

(Ta=25˚C)

0.7±0.1

8.0±0.2

0.45

–0.1

+0.15

emitter voltage 2SC3940A

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

˚C

1 2 3

2.54±0.15

2.3±0.2

1.27

1:Emitter

2:Collector

3:Base

TO–92NL Package

Electrical Characteristics

Parameter

Collector cutoff current

Collector to base

voltage

Collector to emitter

voltage

2SC3940

2SC3940A

2SC3940

2SC3940A

(Ta=25˚C)

Symbol

CBO

CEO

EBO

FE1*1

FE2

CE(sat)

BE(sat)

Conditions

= 20V, I

= 0

= 10µA, I

= 0

= 2mA, I

= 0

= 10µA, I

= 0

= 10V, I

= 500mA

= 5V, I

= 1A

= 500mA, I

= 50mA

= 500mA, I

= 50mA

= 10V, I

= –50mA, f = 200MHz

= 10V, I

= 0, f = 1MHz

0.2

0.85

200

min

typ

max

0.1

Unit

µA

340

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

0.4

1.2

MHz

Pulse measurement

FE1

Rank classification

85 ~ 170

120 ~ 240

170 ~ 340

Rank

FE1

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•

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2001 MAR

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