OM6537SP1 datasheet, PDF - EEWORLD Datasheet

OM6537SP1: DescriptionInsulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, CERAMIC PACKAGE-6; CategoryDiscrete semiconductor The transistor; File Size252KB，8 Pages; ManufacturerOmnirel Corp.

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OM6537SP1 Overview

Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, CERAMIC PACKAGE-6

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Omnirel Corp.
package instruction	CERAMIC PACKAGE-6
Reach Compliance Code	unknown
Other features	ULTRA FAST
Shell connection	ISOLATED
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	500 V
Configuration	SINGLE WITH BUILT-IN ISOLATED DIODE
Gate emitter threshold voltage maximum	4 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PSFM-T6
JESD-609 code	e0
Number of components	1
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	35 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	350 ns
Nominal on time (ton)	37 ns

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