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OMD32F60ML

Description
Half Bridge Based Peripheral Driver
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size41KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

OMD32F60ML Overview

Half Bridge Based Peripheral Driver

OMD32F60ML Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Interface integrated circuit typeHALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 codeR-XUFM-X18
JESD-609 codee0
Number of functions3
Number of terminals18
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Output current flow directionSOURCE AND SINK
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)235
Certification statusNot Qualified
Nominal supply voltage18 V
surface mountNO
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperature30
Preliminary Data Sheet
OMD75N06ML OMD38L60ML
OMD60N10ML OMD32F60ML
3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN
INDUSTRIAL ISOLATED PACKAGE
60 To 600 Volt, 25 To 75 Amp Modules
With Internal Gate Drive, 3-Phase
Bridge Configuration
FEATURES
Internal Gate Drive
Isolated Heat Sink
Low Inductance Design
Fast Switching Speed
Low On Voltage
Zener Gate Protection
DESCRIPTION
These modules are ideally suited for high density, high reliability switching
applications such as motion control, UPS and high power SMPS. These multi-chip
modules incorporate in one package both the power semiconductors and the gate
drive circuitry.
2.1
GENERAL CHARACTERISTICS
(Per Switch) @ 25°C
Part
Number
OMD75N06ML
OMD60N10ML
OMD38L60ML
OMD32F60ML
* Other voltages available.
Power
Device
MOSFET
MOSFET
IGBT
IGBT
Voltage
(V)*
60
100
600
600
Current
(A)
75
60
75
60
R
DS(on)
or
V
CE(sat)
16 m ohms
32 m ohms
1.8 Volts
2.9 Volts
Fall
Time
-
-
1 µs
250 ns
SCHEMATIC
V
BOOT
A
Hi
IN A
θA
V
BOOT
B
PLUS SUPPLY
V
BOOT
C
Hi
IN B
Hi
IN C
θB
θC
Lo
IN A
Lo
IN B
Lo
IN C
+ -
V
LOGIC
+
V
DRIVE
RETURN
Note: IGBT’s have anti-parallel diodes included.
4 11 R0
2.1 - 13

OMD32F60ML Related Products

OMD32F60ML OMD38L60ML OMD75N06ML
Description Half Bridge Based Peripheral Driver Half Bridge Based Peripheral Driver Half Bridge Based MOSFET Driver, MOS
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Interface integrated circuit type HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code R-XUFM-X18 R-XUFM-X18 R-XUFM-X18
JESD-609 code e0 e0 e0
Number of functions 3 3 3
Number of terminals 18 18 18
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 235 235 235
Certification status Not Qualified Not Qualified Not Qualified
Nominal supply voltage 18 V 18 V 18 V
surface mount NO NO NO
Temperature level MILITARY MILITARY MILITARY
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER
Maximum time at peak reflow temperature 30 30 30
Output current flow direction SOURCE AND SINK SOURCE AND SINK -
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