Preliminary Data Sheet
OMD75N06ML OMD38L60ML
OMD60N10ML OMD32F60ML
3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN
INDUSTRIAL ISOLATED PACKAGE
60 To 600 Volt, 25 To 75 Amp Modules
With Internal Gate Drive, 3-Phase
Bridge Configuration
FEATURES
•
•
•
•
•
•
Internal Gate Drive
Isolated Heat Sink
Low Inductance Design
Fast Switching Speed
Low On Voltage
Zener Gate Protection
DESCRIPTION
These modules are ideally suited for high density, high reliability switching
applications such as motion control, UPS and high power SMPS. These multi-chip
modules incorporate in one package both the power semiconductors and the gate
drive circuitry.
2.1
GENERAL CHARACTERISTICS
(Per Switch) @ 25°C
Part
Number
OMD75N06ML
OMD60N10ML
OMD38L60ML
OMD32F60ML
* Other voltages available.
Power
Device
MOSFET
MOSFET
IGBT
IGBT
Voltage
(V)*
60
100
600
600
Current
(A)
75
60
75
60
R
DS(on)
or
V
CE(sat)
16 m ohms
32 m ohms
1.8 Volts
2.9 Volts
Fall
Time
-
-
1 µs
250 ns
SCHEMATIC
V
BOOT
A
Hi
IN A
θA
V
BOOT
B
PLUS SUPPLY
V
BOOT
C
Hi
IN B
Hi
IN C
θB
θC
Lo
IN A
Lo
IN B
Lo
IN C
+ -
V
LOGIC
+
V
DRIVE
RETURN
Note: IGBT’s have anti-parallel diodes included.
4 11 R0
2.1 - 13
OMD75N06ML OMD60N10ML OMD38L60ML OMD32F60ML
ELECTRICAL CHARACTERISTICS: OMD75N06ML/Per Switch
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
DS
= Max. Rat., T
j
= 125°C
V
(BR)DSS
I
DSS
60
-
-
-
-
-
-
25
250
V
µA
µA
ON CHARACTERISTICS
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 75 A
Static Drain-Source On-Resistance
T
j
= 100°C
R
DS(on)
-
-
-
-
15
30
m
m
DYNAMIC CHARACTERISTICS
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0,
f = 1.0 mHz
C
oss
C
rss
-
-
1000
200
-
-
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
= 30 V, I
D
=
75 A
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
1000
500
1000
250
-
-
-
-
ns
ns
ns
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 75 A, V
GS
= 0
V
SD
t
rr
Q
rr
-
-
-
-
50
.1
1.1
-
-
V
ns
µC
2.1
ELECTRICAL CHARACTERISTICS: OMD60N10ML/Per Switch
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
V
(BR)DSS
I
DSS
100
-
-
-
-
-
-
250
1000
V
µA
µA
ON CHARACTERISTICS
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 10 A
Static Drain-Source On-Resistance
T
C
= 70°C
R
DS(on)
-
-
-
-
30
60
m
m
DYNAMIC CHARACTERISTICS
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0,
f = 1.0 mHz
C
oss
C
rss
-
-
1200
300
-
-
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
= 80 V, I
D
=
30 A
R
GS
= 50 , V
GS
=
10 V
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
1000
300
1000
250
-
-
-
-
ns
ns
ns
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 60 A, V
GS
= 0,
di/dt = 100 A/µSec
V
SD
t
rr
Q
rr
-
-
-
-
180
2
2.4
-
-
V
ns
µC
2.1 - 14
OMD75N06ML OMD60N10ML OMD38L60ML OMD32F60ML
ELECTRICAL CHARACTERISTICS: OMD38L60ML/Per Switch
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 250 µA, V
CE
= 0
Zero Gate Voltage Drain Current, V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
J
= 125°C
V
(BR)CES
I
CES
600
-
-
-
-
-
-
.25
1.0
V
mA
mA
ON CHARACTERISTICS
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 38 A, T
C
= 25°C
V
CE(sat)
-
-
1.8
V
DYNAMIC CHARACTERISTICS
Output Capacitance
Reverse Transfer Capacitance
V
GE
= 0 V, V
CE
= 25 V,
f = 1.0 mHz
C
oss
C
rss
-
-
250
75
-
-
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 480 V, I
C
=
38 A
V
GE
= 15 V
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
1000
150
1000
500
-
-
-
-
ns
ns
ns
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, T
C
= 25°C
I
F
= 60 A, T
j
= 125°C
V
R
= 600 V, T
C
= 25°C
V
R
= 480 V, T
j
= 125°C
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
1.85
1.5
100
7.0
50
V
µA
mA
nS
Maximum Reverse Current
Reverse Recovery Time
ELECTRICAL CHARACTERISTICS: OMD32F60ML/Per Switch
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
2.1
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 250 µA, V
CE
= 0
Zero Gate Voltage Drain Current, V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
J
= 125°C
V
(BR)CES
I
CES
600
-
-
-
-
-
-
.25
1.0
V
mA
mA
ON CHARACTERISTICS
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 32 A, T
C
= 25°C
V
CE(sat)
-
-
2.9
V
DYNAMIC CHARACTERISTICS
Output Capacitance
Reverse Transfer Capacitance
V
GE
= 0 V, V
CE
= 25 V,
f = 1.0 mHz
C
oss
C
rss
-
-
250
75
-
-
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 480 V, I
C
=
32 A
V
GE
= 15 V
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
1000
30
1000
125
-
-
-
-
ns
ns
ns
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, T
C
= 25°C
I
F
= 60 A, T
j
= 125°C
V
R
= 600 V, T
C
= 25°C
V
R
= 480 V, T
j
= 125°C
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
1.85
1.5
100
7.0
50
V
µA
mA
nS
Maximum Reverse Current
Reverse Recovery Time
2.1 - 15
OMD75N06ML OMD60N10ML OMD38L60ML OMD32F60ML
ABSOLUTE MAXIMUM RATINGS
Per Switch (T
C
= 25°C unless otherwise noted)
IGBT / MOSFET
Parameters
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
J
= 100°C
I
C
Pulsed
Junction-To-Case
Junction-To-Ambient
R
thJC
R
thJA
Plus Supply
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Linear Derating Factor
Linear Derating Factor
Junction-To-Case
Junction-To-Ambient
75N06ML
60
75
65
225
1.0
.02
1.0
50
60N10ML
100
60
45
225
1.67
.02
.60
50
38L60ML
600
76
38
152
1.0
.02
1.0
50
32F60ML
600
60
32
120
1.0
.02
1.0
50
Units
V
A
A
A
W/°C
W/°C
°C/W
°C/W
Rectifier
PIV
I
O
t
rr
60
75
35
100
60
50
600
38
35
600
32
35
V
A
nsec
Gate Driver
V
DD
V
LSD
to V
HSD
Logic Input Voltage
Either Chip
18
75
-0.3 to V
L
150
18
100
-0.3 to V
L
150
18
500
-0.3 to V
L
150
18
500
-0.3 to V
L
150
V
V
V
°C
2.1
T
j
MECHANICAL OUTLINE (LP-8)
LP-8
3.300
2.280
.213 DIA.
6 PLCS.
.975
.620
.620
2.750
2.275
.510
.275
.070
1.130
.910
.175
.050
2.180
3.740
4.360
3.740
2.740
1.740
1.280
4.300
.490
2.385
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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