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DTC143XSA-C

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size150KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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DTC143XSA-C Overview

Small Signal Bipolar Transistor

DTC143XSA-C Parametric

Parameter NameAttribute value
MakerSECOS
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 2.1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTC143XE / DTC143XUA
DTC143XCA / DTC143XSA / DTC143XM
Elektronische Bauelemente
NPN Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTC143XE (SOT-523)
DTC143XUA (SOT-323)
Addreviated symbol:43
DTC143XM (SOT-723)
Addreviated symbol:43
DTC143XCA (SOT-23)
EQUIVALENT CIRCUIT
Addreviated symbol:43
DTA143XSA (TO-92S)
Addreviated symbol:43
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Limits (DTC143X□)
Parameter
Collector-Base Voltage
Input voltage
Output current
Power dissipation
Junction & Storage temperature
Symbol
M
V
CC
V
IN
I
O
I
C(MAX)
P
D
T
J
, T
STG
100
150
Unit
E
UA
50
-7~20
100
mA
100
200
150, -55~150
300
mW
°
C
CA
SA
V
V
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Nov-2011 Rev.B
Page 1 of 2

DTC143XSA-C Related Products

DTC143XSA-C DTC143XCA-C DTA143XSA-C DTC143XM-C
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Transistor Small Signal Bipolar Transistor
Reach Compliance Code compliant compliant compliant compliant
Maker SECOS - SECOS SECOS
package instruction CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-F3
Other features BUILT IN BIAS RESISTANCE RATIO IS 2.1 BUILT IN BIAS RESISTANCE RATIO IS 2.1 - BUILT IN BIAS RESISTANCE RATIO IS 2.1
Maximum collector current (IC) 0.1 A 0.1 A - 0.1 A
Collector-emitter maximum voltage 50 V 50 V - 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 30 - 30
JESD-30 code O-PBCY-T3 R-PDSO-G3 - R-PDSO-F3
Number of components 1 1 - 1
Number of terminals 3 3 - 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND RECTANGULAR - RECTANGULAR
Package form CYLINDRICAL SMALL OUTLINE - SMALL OUTLINE
Polarity/channel type NPN NPN - NPN
surface mount NO YES - YES
Terminal form THROUGH-HOLE GULL WING - FLAT
Terminal location BOTTOM DUAL - DUAL
transistor applications SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON - SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz - 250 MHz
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