EEWORLDEEWORLDEEWORLD

Part Number

Search

2SA1942-O

Description
TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size130KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1942-O Overview

TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power

2SA1942-O Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instruction2-21F1A, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)12 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment120 W
Maximum power dissipation(Abs)120 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
VCEsat-Max2.5 V
Base Number Matches1
2SA1942
TOSHIBA Transistor
Silicon PNP Triple Diffused Type
2SA1942
Power Amplifier Applications
Unit: mm
High breakdown voltage: V
CEO
=
−160
V (min)
Complementary to 2SC5199
Recommended for 80-W high-fidelity audio frequency amplifier
output stage
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−160
−160
−5
−12
−1.2
120
150
−55
to 150
Unit
V
V
V
A
A
W
JEDEC
°C
°C
2-21F1A
JEITA
TOSHIBA
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09

2SA1942-O Related Products

2SA1942-O 2SA1942-R
Description TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power TRANSISTOR 12 A, 160 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
package instruction 2-21F1A, 3 PIN 2-21F1A, 3 PIN
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 12 A 12 A
Collector-emitter maximum voltage 160 V 160 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 80 55
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power consumption environment 120 W 120 W
Maximum power dissipation(Abs) 120 W 120 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz
VCEsat-Max 2.5 V 2.5 V
Base Number Matches 1 1
The company's purchasing department said that LM3S6911 is not available.
The company used LM3S6911 in a batch of products, mainly for its Ethernet function. It has been on the market for two years and is now basically stable. As a result, the procurement department said th...
zhzhchang Microcontroller MCU
Bistable circuit
[size=4] Bistable circuit with memory function The output of the multivibrator always changes from high to low, so it is also called an astable circuit. Another bistable circuit is completely differen...
fish001 Analogue and Mixed Signal
Please advise on MOS tube driver issues
There is no square wave output from the OUT pin 3 in the figure below, and there is no output from the HO pin of the 2125 above. The power supply is normal. Please give me some guidance, thank you....
Knight97538 Power technology
EEWORLD University Hall----LDO Output Noise LDO output noise
LDO Output Noise LDO output noise : https://training.eeworld.com.cn/course/4381Where does LDO output noise come from?...
通通 Power technology
I would like to ask you a question about using QT to operate Excel. Please give me some advice.
[color=#333333][font="][size=14px]Recently, a host computer was used in a project, so I used QT5 to make a host computer. The host computer needs to write some data to an EXCEL file. I referred to the...
wudayongnb Embedded System
Nuclear power, long awaited by ST MEMS
Looking forward to follow-up activities...
dql2016 ST Sensors & Low Power Wireless Technology Forum

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 459  2399  1258  2134  2854  10  49  26  43  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号