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2SC2982-B

Description
TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size165KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC2982-B Overview

TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal

2SC2982-B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment1 W
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.5 V
Base Number Matches1
2SC2982
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent linearity
: h
FE (1)
= 140 to 600 (V
CE
= 1 V, I
C
= 0.5 A)
: h
FE (2)
= 70 (min), 140 (typ.), (V
CE
= 1 V, I
C
= 2 A)
Low saturation voltage
: V
CE (sat)
= 0.5 V (max) (I
C
= 2 A, I
B
= 50 mA)
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1314
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse (Note 1)
DC
Pulse (Note 1)
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
Collector power dissipation
P
C
(Note 2)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
30
30
10
6
2
4
0.4
0.8
500
1000
150
−55
to 150
mW
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
SC-62
2-5K1A
Weight: 0.05 g (typ.)
Base current
A
°C
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
2
Note 2: 2SC2982 mounted on a ceramic substrate (250 mm × 0.8 t)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21

2SC2982-B Related Products

2SC2982-B 2SC2982-A 2SC2982-C 2SC2982-D
Description TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Parts packaging code SC-62 SC-62 SC-62 SC-62
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 2 A 2 A 2 A 2 A
Collector-emitter maximum voltage 10 V 10 V 10 V 10 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 140 300 420
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power consumption environment 1 W 1 W 1 W 1 W
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V 0.5 V
Base Number Matches 1 1 1 1

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