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DTA114EET1 Series,
SDTA114EET1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−75/SOT−416 package which is designed for low power
surface mount applications.
Features
http://onsemi.com
PNP SILICON BIAS
RESISTOR TRANSISTORS
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
A
= 25C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
SC−75 (SOT−416)
CASE 463
STYLE 1
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
xx M
G
G
xx
M
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Specific Device Code
xx = (Refer to page 4)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 7
1
Publication Order Number:
DTA114EET1/D
DTA114EET1 Series, SDTA114EET1 Series
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation, FR−4 Board (Note 1)
@ T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ T
A
= 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0
1.0 Inch Pad.
Symbol
P
D
Value
200
1.6
600
300
2.4
400
−55
to +150
Unit
mW
mW/C
C/W
R
qJA
P
D
mW
mW/C
C/W
C
R
qJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
Collector−Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
V
(BR)CBO
V
(BR)CEO
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
−
−
Vdc
Vdc
−
−
−
−
100
500
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
250
250
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Symbol
Min
Typ
Max
Unit
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2
DTA114EET1 Series, SDTA114EET1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
ON CHARACTERISTICS
(Note 4)
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA)
DTA123EET1
(I
C
= 10 mA, I
B
= 1 mA)
DTA114TET1/DTA143TET1
DTA143ZET1/DTA124XET1
DTA143EET1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
DTA114EET1
DTA124EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
DTA144EET1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
DTA115EET1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW)
DTA144WET1
5. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
V
CE(sat)
−
−
0.25
Vdc
V
OL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (continued)
Characteristic
ON CHARACTERISTICS
(Note 6)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
Input Resistor
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
Resistor Ratio
DTA114EET1/DTA124EET1
DTA144EET1/DTA115EET1
DTA114YET1, SDTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1/DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144WET1
6. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
V
OH
4.9
−
−
Vdc
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
−
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
−
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
kW
R
1
/R
2
−
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3
DTA114EET1 Series, SDTA114EET1 Series
ORDERING INFORMATION AND RESISTOR VALUES
Device
DTA114EET1
DTA114EET1G
DTA124EET1
DTA124EET1G
DTA144EET1
DTA144EET1G
DTA114YET1
DTA114YET1G
6D
SDTA114YET1G
DTA114TET1
DTA114TET1G
DTA143TET1
DTA143TET1G
DTA123EET1
DTA123EET1G
DTA143EET1
DTA143EET1G
DTA143ZET1
DTA143ZET1G
DTA124XET1
DTA124XET1G
DTA123JET1
DTA123JET1G
DTA115EET1
DTA115EET1G
DTA144WET1
DTA144WET1G
6P
47
22
6N
100
100
6M
2.2
47
6L
22
47
6K
4.7
47
43
4.7
4.7
6H
2.2
2.2
6F
4.7
6E
10
10
47
6C
47
47
6B
22
22
6A
10
10
Marking
R1 (K)
R2 (K)
Package
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
SC−75
SC−75
(Pb−Free)
Shipping
†
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
3,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4