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DA227YFH

Description
Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, EMD4, SC-75A, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size787KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

DA227YFH Overview

Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, EMD4, SC-75A, 4 PIN

DA227YFH Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-F4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F4
Number of components2
Number of terminals4
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.15 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Data Sheet
AEC-Q101 Qualified
Switching Diode
DA227YFH
Applications
Ultra high speed switching
Dimensions
(Unit : mm)
1.6±0.1
0.22±0.05
0.13±0.05
(3)
Land
size figure
(Unit : mm)
0.5
0.45
(4)
Features
1) Ultra small mold type. (EMD4)
2) High reliability.
(1)
0.5
0.5
(2)
1.2±0.1
1.6±0.1
0½0.1
1.0
EMD4
Structure
0.5±0.05
Construction
Silicon epitaxial planar
1.0±0.1
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
Taping
specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
1.75±0.1
0.3±0.1
3.5±0.05
1.65±0.1
5.5±0.2
8.0±0.2
1.7±0.05
1.65±0.1
1PIN
4.0±0.1
φ0.8±0.1
0½0.1
0.65±0.1
Absolute
maximum ratings
(Ta=25°C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive peak)
V
R
Reverse voltage (DC)
I
FM
Forward current (Single)
Average rectified forward current (Single)
Io
I
surge
Surge current (t=1us) (Single)
Power dissipation (*1)
Pd
Junction temperature
Tj
Storage temperature
Tstg
Rated in slash put frequency
f
(*1) Pd=120mW when only 1 circuit is operating.
Limits
80
80
300
100
4
150
150
55
to
150
100
Unit
V
V
mA
mA
A
mW/Total
°C
°C
MHz
CONDITION = Each terminal mounted on a recommended land pattern. (0.35x0.9mm)
Electrical
characteristics
(Ta=25°C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
I
R
Ct
trr
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
V
μA
pF
ns
I
F
=100mA
V
R
=70V
Conditions
V
R
=6V , f=1MHz
V
R
=6V , I
F
=5mA , RL=50
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.A
1.65±0.01
1.55
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