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2SB1165Q

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size123KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB1165Q Overview

Transistor

2SB1165Q Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1165
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD1722
・Low
collector saturation voltage
・Fast
switching time
APPLICATIONS
・For
use in relay drivers,high-speed
inverters,converters.
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
IN
导½
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-50
-6
-5
-8
UNIT
V
V
V
A
A
Collector current (DC)
Collector current-Peak
T
a
=25℃
1.2
W
20
150
-55~150
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature

2SB1165Q Related Products

2SB1165Q 2SB1165R 2SB1165S 2SB1165T 2SB1165
Description Transistor Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1
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