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2SB1407(L)B

Description
2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size64KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SB1407(L)B Overview

2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3

2SB1407(L)B Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website:
http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to
http://www.renesas.com/inquiry.

2SB1407(L)B Related Products

2SB1407(L)B 2SB1407(L)C 2SB1407CS 2SB1407DL 2SB1407DS 2SB1407(L)D 2SB1407(S)B 2SB1407(S)C 2SB1407(S)D 2SB1407BS
Description 2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3 2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3 2SB1407CS TRANSISTOR,BJT,PNP,35V V(BR)CEO,2.5A I(C),TO-251AA TRANSISTOR,BJT,PNP,35V V(BR)CEO,2.5A I(C),TO-252AA 2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3 2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3 2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3 2.5A, 35V, PNP, Si, POWER TRANSISTOR, DPAK-3 TRANSISTOR,BJT,PNP,35V V(BR)CEO,2.5A I(C),TO-252AA
Reach Compliance Code unknow unknow compli compli compli unknow unknow unknow unknow compli
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 - - - IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 -
Contacts 3 3 - - - 3 3 3 3 -
ECCN code EAR99 EAR99 - - - EAR99 EAR99 EAR99 EAR99 -
Shell connection COLLECTOR COLLECTOR - - - COLLECTOR COLLECTOR COLLECTOR COLLECTOR -
Maximum collector current (IC) 2.5 A 2.5 A - 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A
Collector-emitter maximum voltage 35 V 35 V - - - 35 V 35 V 35 V 35 V -
Configuration SINGLE SINGLE - Single Single SINGLE SINGLE SINGLE SINGLE Single
Minimum DC current gain (hFE) 60 100 - 160 160 160 60 100 160 60
JESD-30 code R-PSIP-T3 R-PSIP-T3 - - - R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 -
Number of components 1 1 - - - 1 1 1 1 -
Number of terminals 3 3 - - - 3 2 2 2 -
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR - - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form IN-LINE IN-LINE - - - IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Polarity/channel type PNP PNP - PNP PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified - - - Not Qualified Not Qualified Not Qualified Not Qualified -
surface mount NO NO - NO YES NO YES YES YES YES
Terminal form THROUGH-HOLE THROUGH-HOLE - - - THROUGH-HOLE GULL WING GULL WING GULL WING -
Terminal location SINGLE SINGLE - - - SINGLE SINGLE SINGLE SINGLE -
transistor applications AMPLIFIER AMPLIFIER - - - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON - - - SILICON SILICON SILICON SILICON -
Base Number Matches 1 1 1 1 1 1 1 1 1 -
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