Transys
Electronics
L I M I T E D
SOT-323 Plastic-Encapsulated Transistors
SOT-323
2SA1611
FEATURES
Power dissipation
P
CM
TRANSISTOR (PNP)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 25¡ À0. 05
1. 01 R
EF
: 0.15
W (Tamb=25℃)
2. 30¡ À0. 05
Collector current
: -0.1
A
I
CM
Collector-base voltage
V
V
(BR)CBO
: -60
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
1. 30¡ À0. 03
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-100
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-100
µA,
I
C
=0
V
CB
=
-60
V,I
E
=0
V
EB
=
-5
V,I
C
=0
V
CE
=
-6V
, I
C
=
-1
mA
I
C
=
-100
mA, I
B
=
-10
mA
V
CE
=
-6
V, I
C
=
-1
mA
V
CE
=
-6
V, I
C
=
-10
mA
V
CB
=
-10
V, I
E
=0, f=
1
MHz
-60
-50
-5
-0.1
-0.1
90
600
-0.3
-0.58
-0.68
0. 30
2. 00¡ À0. 05
µA
µA
V
V
MHz
pF
f
T
C
ob
180
4.5
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
M4
90-180
M4
M5
135-270
M5
M6
200-400
M6
M7
300-600
M7
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