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2SA1611-M4

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size106KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

2SA1611-M4 Overview

Small Signal Bipolar Transistor

2SA1611-M4 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1
2SA1611
Elektronische Bauelemente
-0.1A , -60V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain
High Voltage
Complementary to 2SC4177
A
3
SOT-323
L
3
Top View
C B
1
2
2
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
Product-Rank
Range
Marking
2SA1611-M4
90~180
M4
2SA1611-M6
200~400
M6
2SA1611-M5
135~270
M5
2SA1611-M7
300~600
M7
F
K
1
E
D
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
REF.
G
H
J
K
L
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch

Base
Collector

Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
-60
-50
-5
-100
150
833
150, -55~150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter
Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Collector to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Min.
-60
-50
-5
-
-
90
-
-0.58
-
-
Typ.
-
-
-
-
-
-
-
-
180
4.5
Max.
-
-
-
-100
-100
600
-0.3
-0.68
-
-
Unit
V
V
V
nA
nA
Test Conditions
I
C
= -100A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100A, I
C
=0
V
CB
= -60V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -1mA
V
V
MHz
pF
I
C
= -100mA, I
B
= -10mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -10V, I
E
=0, f=1MHz
*Pulse test:pulse width
350
s, duty cycle
2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
Page 1 of 1

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