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2SA1611-M6

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size106KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

2SA1611-M6 Overview

Small Signal Bipolar Transistor

2SA1611-M6 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1
2SA1611
Elektronische Bauelemente
-0.1A , -60V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain
High Voltage
Complementary to 2SC4177
A
3
SOT-323
L
3
Top View
C B
1
2
2
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
Product-Rank
Range
Marking
2SA1611-M4
90~180
M4
2SA1611-M6
200~400
M6
2SA1611-M5
135~270
M5
2SA1611-M7
300~600
M7
F
K
1
E
D
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
REF.
G
H
J
K
L
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch

Base
Collector

Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
-60
-50
-5
-100
150
833
150, -55~150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter
Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Collector to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Min.
-60
-50
-5
-
-
90
-
-0.58
-
-
Typ.
-
-
-
-
-
-
-
-
180
4.5
Max.
-
-
-
-100
-100
600
-0.3
-0.68
-
-
Unit
V
V
V
nA
nA
Test Conditions
I
C
= -100A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100A, I
C
=0
V
CB
= -60V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -1mA
V
V
MHz
pF
I
C
= -100mA, I
B
= -10mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -10V, I
E
=0, f=1MHz
*Pulse test:pulse width
350
s, duty cycle
2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Jan-2011 Rev. A
Page 1 of 1

2SA1611-M6 Related Products

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Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Reach Compliance Code compli compli compli compli compli compli compli compli compliant
Base Number Matches 1 1 1 1 1 1 1 1 1

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