Ordering number:ENN575D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB764/2SD863
Voltage Regulator, Relay Lamp Driver
Electrical Equipment Applications
Package Dimensions
unit:mm
2006B
[2SB764/2SD863]
6.0
5.0
4.7
0.5
0.6
6.0
14.0
3.0
8.5
0.5
0.5
1 2 3
( ) : 2SB764
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.45
1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
(–)60
(–)50
(–)5
(–)1
(–)2
0.9
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)50mA
VCE=(–)2V, IC=(–)1A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
60*
30
150
(20)
12
MHz
pF
pF
Conditions
Ratings
min
typ
max
(–)1
(–)1
320*
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503TN (KT)/91098HA (KT)/4107KI/3085MW, TS No.575–1/4
2SB764/2SD863
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Symbol
VCE(sat)
Conditions
IC=(–)500mA, IB=(–)50mA
Ratings
min
typ
(–0.2)
0.15
(–)0.85
(–)60
(–)50
(–)5
max
(–0.7)
0.5
(–)1.2
Unit
V
V
V
V
V
V
VBE(sat) IC=(–)500mA, IB=(–)50mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
IE=(–)10µA, IC=0
* : The SB764/2SD863 are classified by 50mA h
FE
as follows :
Rank
hFE
D
60 to 120
E
100 to 200
F
160 to 320
--1000
IC -- VCE
2SB764
A
0m
--1
1000
IC -- VCE
10m
A
8m
A
2SD863
A
4mA
Collector Current, IC – mA
--8mA
--6mA
Collector Current, IC – mA
--800
800
6m
--600
600
--4mA
--400
3mA
400
--3mA
--2mA
2mA
--200
--1mA
200
1mA
0
0
--2
--4
--6
--8
IB=0
--10
--12
ITR08345
0
0
2
4
6
8
IB=0
10
12
ITR08346
Collector-to-Emitter Voltage, VCE – V
--1000
Collector-to-Emitter Voltage, VCE – V
1000
IC -- VCE
mA
--5
0
IC -- VCE
50mA
30m
--
m
30
A
2SB764
--2
0mA
--10m
A
Collector Current, IC – mA
800
20m
A
10mA
2SD863
Collector Current, IC – mA
--800
A
--600
600
6mA
--6mA
--400
4mA
400
--4mA
2mA
200
--2mA
--200
0
0
--0.2
--0.4
--0.6
IB=0
--0.8
--1.0
--1.2
ITR08347
0
0
0.2
0.4
0.6
IB=0
0.8
1.0
1.2
ITR08348
Collector-to-Emitter Voltage, VCE – V
1200
Collector-to-Emitter Voltage, VCE – V
1000
IC -- VBE
VCE=2V
hFE -- IC
VCE=2V
Collector Current, IC – mA
1000
5
800
DC Current Gain, hFE
3
2
2SD863
2S
B
764
600
100
63
2SD
8
764
2SB
400
5
3
200
0
0
(For PNP, minus sign
is omitted.)
0.2
0.4
0.6
0.8
1.0
1.2
ITR08349
2
10
1.0
(For PNP, minus sign is omitted.)
2
3
5
10
2
3
5
100
2
3
5
Base-to-Emitter Voltage, VBE – V
Collector Current, IC – mA
1000 2 3
ITR08350
No.575–2/4
2SB764/2SD863
100
7
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, fT – MHz
3
2
f T -- IC
VCE=10V
Output Capacitance, Cob – pF
5
3
2
100
7
5
2SB
764
2SD
863
4
76
SB
2
63
D8
2S
10
7
5
3
1.0
3
2
(For PNP, minus sign is omitted.)
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
5
3
7 100
ITR08351
10
1.0
(For PNP, minus sign is omitted.)
2
3
5
7
10
2
3
5
Collector Current, IC – mA
7 100
2
ITR08352
VCE(sat) -- IC
IC / IB=10
ASO
5
3
2
ICP=2A
Single pulse
s
1m
s
m
10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2
Collector Current, IC – A
1.0
7
5
3
2
0.1
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IC=1A
1s
DC
10
0m
s
B
2S
4
76
op
2
63
D8
S
era
t
ion
0.01
(For PNP, minus sign is omitted.)
5 7 10
2
3
5
7 100
2
3
5 7 1000
2
3
0.01
7
5
ITR08353
(For PNP, minus sign is omitted.)
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
1000
Collector-to-Emitter Voltage, VCE – V
7 100
ITR08354
PC -- Ta
2SB764 / 2SD863
Collector Dissipation, P
C
– mW
800
600
400
200
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR08355
No.575–3/4
2SB764/2SD863
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.575–4/4
Microcontroller MCU
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