2SA1641RTP datasheet, PDF - EEWORLD Datasheet

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2SA1641RTP: DescriptionSmall Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size96KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SA1641RTP Overview

Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN

2SA1641RTP Parametric

Parameter Name	Attribute value
Objectid	1543500877
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	950 ns
Maximum opening time (tons)	300 ns

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Ordering number:EN2926A

PNP Epitaxial Planar Silicon Transistor

2SA1641

High-Current Switching Applications

Features

· Adoption of FBET, MBIT processes.

· Low saturation voltage.

· Fast switching speed.

· Large current capacity.

· Small and slim package making it easy to make

2SA1641-used set smaller.

Package Dimensions

unit:mm

2045B

[2SA1641]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

unit:mm

2044B

[2SA1641]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82098HA (KT)/8219MO/4049MO, TS No.2926-1/4

2SA1641

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any and all SANYO products described or contained herein fall under strategic

products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of

Japan, such products must not be exported without obtaining export license from the Ministry of

International Trade and Industry in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 1998. Specifications and information herein are subject to

change without notice.

PS No.2926-4/4

2SA1641RTP Related Products

	2SA1641RTP	2SA1641RTP-FA	2SA1641TTP	2SA1641TP-FA	2SA1641TP	2SA1641TTP-FA	2SA1641STP	2SA1641STP-FA
Description	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN
Objectid	1543500877	1543500876	1543500883	1543500880	1543500881	1543500882	1543500879	1543500878
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	4	3	4	3	4	3	4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V	20 V	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	200	60	60	200	140	140
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	2	3	2	3	2	3	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	NO	YES	NO	YES	NO	YES
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Maximum off time (toff)	950 ns	950 ns	950 ns	950 ns	950 ns	950 ns	950 ns	950 ns
Maximum opening time (tons)	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns
Maximum power dissipation(Abs)	15 W	15 W	15 W	-	-	15 W	15 W	15 W

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