Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
| Parameter Name | Attribute value |
| Objectid | 1481158513 |
| package instruction | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| YTEOL | 0 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 8 A |
| Collector-emitter maximum voltage | 20 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PSIP-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 15 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 200 MHz |
| Maximum off time (toff) | 950 ns |
| Maximum opening time (tons) | 300 ns |
| 2SA1641S | 2SA1641R | 2SA1641T | 2SA1641TL | |
|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon |
| Objectid | 1481158513 | 1481158510 | 1481158516 | 1481158954 |
| package instruction | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 8 A | 8 A | 8 A | 8 A |
| Collector-emitter maximum voltage | 20 V | 20 V | 20 V | 20 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 100 | 140 | 200 | 60 |
| JESD-30 code | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 2 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | YES |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
| Maximum off time (toff) | 950 ns | 950 ns | 950 ns | 950 ns |
| Maximum opening time (tons) | 300 ns | 300 ns | 300 ns | 300 ns |
| Maximum power dissipation(Abs) | 15 W | 15 W | 15 W | - |
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