2SA1641R datasheet, PDF - EEWORLD Datasheet

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2SA1641R: DescriptionSmall Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size92KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SA1641R Overview

Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon

2SA1641R Parametric

Parameter Name	Attribute value
Objectid	1481158510
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	140
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	950 ns
Maximum opening time (tons)	300 ns

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2SA1641R Related Products

	2SA1641R	2SA1641S	2SA1641T	2SA1641TL
Description	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
Objectid	1481158510	1481158513	1481158516	1481158954
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	140	100	200	60
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	3	3	3	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz
Maximum off time (toff)	950 ns	950 ns	950 ns	950 ns
Maximum opening time (tons)	300 ns	300 ns	300 ns	300 ns
Maximum power dissipation(Abs)	15 W	15 W	15 W	-

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