INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3552
DESCRIPTION
·High
Breakdown Voltage
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
1100
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current- Continuous
12
A
I
CM
Collector Current-Peak
30
A
I
B
B
Base Current- Continuous
6
A
P
C
Collector Power Dissipation
@ T
C
=25℃
150
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 5mA; R
BE
= ∞
I
E
= 1mA; I
C
= 0
I
C
= 1mA; I
E
= 0
I
C
= 6A; I
B
= 1.2A
B
2SC3552
MIN
800
7
1100
TYP.
MAX
UNIT
V
V
V
2.0
1.5
10
10
10
8
215
15
40
V
V
μA
μA
I
C
= 6A; I
B
= 1.2A
B
V
CB
= 800V ; I
E
= 0
V
EB
= 5V ; I
C
= 0
I
C
= 0.8A ; V
CE
= 5V
I
C
= 4A ; V
CE
= 5V
I
E
= 0; V
CB
= 10V; f
test
=1.0MHz
I
C
= 0.8A ; V
CE
= 10V
pF
MHz
Switching Times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= 8A , I
B1
= 1.6A; I
B2
= -3.2A
R
L
= 500Ω; V
CC
=400V
0.5
3.0
0.3
μs
μs
μs
h
FE-1
Classifications
K
10-20
L
15-30
M
20-40
isc Website：www.iscsemi.cn
2
Embedded System
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