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2SC3552M

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size84KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SC3552M Overview

Transistor

2SC3552M Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3552
DESCRIPTION
·High
Breakdown Voltage
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
1100
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current- Continuous
12
A
I
CM
Collector Current-Peak
30
A
I
B
B
Base Current- Continuous
6
A
P
C
Collector Power Dissipation
@ T
C
=25℃
150
W
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn

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Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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