INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
2SC5764
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 400V(Min)
·Fast
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for switching regulators applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
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w
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VALUE
UNIT
700
V
400
V
8
V
7
A
14
A
2
W
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
Total Power Dissipation
@ T
a
=25℃
P
C
Total Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
30
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 5mA; R
BE
=
∞
I
C
= 1mA; I
E
= 0
I
E
= 1mA; I
C
= 0
I
C
= 4A; I
B
= 0.8A
B
2SC5764
MIN
400
700
8
TYP.
MAX
UNIT
V
V
V
0.8
1.5
10
10
50
V
V
μA
μA
I
C
= 4A; I
B
= 0.8A
B
Collector Output Capacitance
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V
EB
= 5V; I
C
= 0
I
C
= 0.8A; V
CE
= 5V
I
C
= 4A; V
CE
= 5V
20
10
I
C
= 1mA; V
CE
= 5V
10
I
E
= 0; V
CB
= 10V; f= 1MHz
I
C
= 0.8A; V
CE
= 10V
I
C
= 5A, I
B1
= 1A; I
B2
= -2A;
R
L
= 40Ω; V
CC
= 200V
V
CB
= 400V; I
E
= 0
80
17
pF
MHz
Current-Gain—Bandwidth Product
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
0.5
2.5
0.25
μs
μs
μs
h
FE-1
Classifications
M
20-40
N
30-50
isc Website：www.iscsemi.cn
2
PCB Design
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