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BZX84C3

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size238KB,4 Pages
ManufacturerCheng-Yi Electronic Co., Ltd.
Download Datasheet Parametric Compare View All

BZX84C3 Overview

Zener Diode

BZX84C3 Parametric

Parameter NameAttribute value
MakerCheng-Yi Electronic Co., Ltd.
Reach Compliance Codeunknown
BZX84C SERIES
PB FREE PRODUCT
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE
2.4 - 75 Volts
POWER
410 mWatts
SOT- 23
Unit: inch (mm)
FEATURES
• 410mW Power Dissipation
.056(1.40)
.007(.20)MIN
• Planar Die construction
.047(1.20)
.119(3.00)
.110(2.80)
• Ideally Suited for Automated Assembly Processes
.103(2.60)
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
MECHANICAL DATA
• Case: SOT-23, Molded Plastic
• Terminals: Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram Below
.044(1.10)
.006(.15)MAX
.020(.50)
.013(.35)
• Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Maximum Forward Voltage Drop at IF=10mA
Power Dissipation (Notes A) at 25
O
C
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load (JEDEC method) (Notes B)
Operating Junction and StorageTemperature Range
Symbol
V
F
P
D
I
FSM
T
J
Value
0.9
410
2.0
-55 to +150
.035(0.90)
• Approx. Weight: 0.008 grams
Units
V
mW
Amps
O
SINGLE
( Note C )
NOTES:
A. Mounted on 5.0mm
2
(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
C. For Structure Purpose only.
.086(2.20)
C
PAGE . 1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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