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2SC2433

Description
30A, 120V, NPN, Si, POWER TRANSISTOR, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size112KB,4 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
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2SC2433 Overview

30A, 120V, NPN, Si, POWER TRANSISTOR, TO-3

2SC2433 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresRING EMITTER TRANSISTOR
Shell connectionCOLLECTOR
Maximum collector current (IC)30 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)7
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment150 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Maximum off time (toff)1800 ns
VCEsat-Max1.5 V
Base Number Matches1

2SC2433 Related Products

2SC2433 2SA1043
Description 30A, 120V, NPN, Si, POWER TRANSISTOR, TO-3 Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Other features RING EMITTER TRANSISTOR RING EMITTER TRANSISTOR
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 30 A 30 A
Collector-emitter maximum voltage 120 V 120 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 7 7
JEDEC-95 code TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN PNP
Maximum power consumption environment 150 W 150 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 80 MHz 60 MHz
Maximum off time (toff) 1800 ns 1800 ns
VCEsat-Max 1.5 V 1.5 V
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