2SA1043 datasheet, PDF - EEWORLD Datasheet

2SA1043: DescriptionPower Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size112KB，4 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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2SA1043 Overview

Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin

Parameter Name	Attribute value
Objectid	1414420881
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RING EMITTER TRANSISTOR
Shell connection	COLLECTOR
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	7
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	150 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
Maximum off time (toff)	1800 ns
VCEsat-Max	1.5 V

	2SA1043	2SC2433
Description	Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin	30A, 120V, NPN, Si, POWER TRANSISTOR, TO-3
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Other features	RING EMITTER TRANSISTOR	RING EMITTER TRANSISTOR
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	30 A	30 A
Collector-emitter maximum voltage	120 V	120 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	7	7
JEDEC-95 code	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	175 °C	175 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	NPN
Maximum power consumption environment	150 W	150 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	60 MHz	80 MHz
Maximum off time (toff)	1800 ns	1800 ns
VCEsat-Max	1.5 V	1.5 V

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