Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1501
DESCRIPTION
·With
TO-126 package
·High
breakdown voltage
·Large
power dissipation
APPLICATIONS
·For
medium power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
300
300
5
0.1
0.15
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
h
FE-1
h
FE-2
I
CBO
C
OB
f
T
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
DC current gain
DC current gain
Collector cut-off current
Output capacitance
Transition frequency
CONDITIONS
I
C
=100μA;I
E
=0
I
C
=1mA; I
B
=0
I
E
=100μA; I
C
=0
I
C
=100mA I
B
=10m A
I
C
=50mA ; V
CE
=10V
I
C
=10mA ; V
CE
=10V
I
C
=50mA ; V
CE
=10V
V
CB
=300V ; I
E
=0
I
E
=0; V
CB
=30V;f=1MHz
I
E
=20mA ; V
CB
=30V
8
55
30
30
MIN
300
300
5
TYP.
2SC1501
MAX
UNIT
V
V
V
5.0
1.2
V
V
200
100
μA
pF
MHz
h
FE-2
classifications
P
30-60
Q
50-100
R
80-150
S
100-200
2
Analog electronics
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