2SD668, 2SD668A
Maximum Collector Dissipation Curve
1.5
Collector power dissipation Pc (W)
1.0
0.5
0
50
100
Ambient temperature Ta (°C)
Typical Output Characteristics
150
20
Collector current I
C
(mA)
100
16
90
80
70
12
60
50
8
40
30
4
20
10
µA
I
B
= 0
0
2
4
6
8
10
Collector to emitter voltage V
CE
(V)
Typical Transfer Characteristics
100
Collector current I
C
(mA)
V
CE
= 5 V
30
Ta = 75
°C
10
1
0
0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage V
BE
(V)
DC Current Transfer Ratio
vs. Collector Current
280
DC current transfer ratio h
FE
240
200
160
120
80
40
0.5
25
–25
Ta = 75°C
V
CE
= 5 V
1.0
2
5
10
20
Collector current I
C
(mA)
–25
3
25
50
3
2SD668, 2SD668A
1.2
l
C
= 10 l
B
1.0
0.8
0.6
0.4
0.2
25
0
–0.1
Collector current I
C
(mA)
0
V
CE (sat)
V
BE (sat)
Ta = –25
°C
25
75
0.24
0.20
0.16
0.12
0.08
=
°
C
–25
75
Ta
0.04
Gain Bandwidth Product
vs. Collector Current
500
Gain bandwidth product f
T
(MHz)
V
CE
= 10 V
200
100
50
20
10
1
2
5
10
20
Collector current I
C
(mA)
50
Collector Output Capacitance
vs. Collector to Base Voltage
Collector output capacitance C
ob
(pF)
50
f = 1 MHz
I
E
= 0
20
10
5
2
1.0
0.5
1
2
5
10
20
50 100
Collector to base voltage V
CB
(V)
4
Collector to emitter saturation voltage V
CE (sat)
(V)
Saturation Voltage vs. Collector Current
Base to emitter saturation voltage V
BE (sat)
(V)
2SD668, 2SD668A
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of this document without Hitachi’s permission.
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4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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APPLICATIONS.
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