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2SD668B

Description
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size33KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

2SD668B Overview

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN

2SD668B Parametric

Parameter NameAttribute value
Parts packaging codeSIP
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
Base Number Matches1
2SD668, 2SD668A
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SB648/A
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
Tj
Tstg
2SD668
180
120
5
50
100
1
150
–55 to +150
2SD668A
180
160
5
50
100
1
150
–55 to +150
Unit
V
V
V
mA
mA
W
°C
°C

2SD668B Related Products

2SD668B 2SD668AB 2SD668D 2SD668C
Description Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN
Parts packaging code SIP SIP SIP SIP
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 120 V 160 V 120 V 120 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 60 160 100
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 1 W 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz 140 MHz 140 MHz
Base Number Matches 1 1 1 1

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