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JAN2N5154

Description
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size222KB,3 Pages
ManufacturerCobham Semiconductor Solutions
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Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin

JAN2N5154 Parametric

Parameter NameAttribute value
MakerCobham Semiconductor Solutions
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage80 V
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
NPN Power Silicon Transistor
2N5152, 2N5152L & 2N5154, 2N5154L
Features
Available in commercial, JAN, JANTX, JANTXV, JANS
and JANSR 100K rads (Si) per MIL-PRF-19500/544
TO-5 Package: 2N5152L, 2N5154L
TO-39 (TO-205AD) Package: 2N5152, 2N5154
Maximum Ratings (TC = +25°C unless otherwise noted)
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25 °C
@ TC = +25 °C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
R
θJC
Value
80
100
5.5
2.0
1.0
10
-65 to +200
10
Units
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
Operating & Storage Temperature Range
Thermal Resistance, Junction-to-Case
Electrical Characteristics (TA = +25°C unless otherwise noted)
OFF Characteristics
Collector - Emitter Breakdown Voltage
IC = 100 mAdc, IB = 0
Emitter - Base Cutoff Current
VEB = 4.0 Vdc, IC = 0
VEB = 5.5 Vdc, IC = 0
Collector - Emitter Cutoff Current
VCE = 60 Vdc, VBE = 0
VCE = 100 Vdc, VBE = 0
Collector - Emitter Cutoff Current
VCE = 40 Vdc, IB = 0
Symbol
V(BR)CEO
IEBO
Mimimum
80
---
Maximum
---
1.0
1.0
1.0
1.0
50
Units
Vdc
μAdc
mAdc
μAdc
mAdc
μAdc
ICES
---
ICEO
---
Revision Date: 4/15/2014
1

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