Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1455
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SD2203
・Low
collector saturation voltage:
・Large
current capacity
APPLICATIONS
・High
current power switching applications
PINNING
PIN
1
2
3
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
导½
半
Collector-base voltage
HA
INC
Emitter-base voltage
Collector current
Collector dissipation
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-90
-80
-6
-7
-12
UNIT
V
V
V
A
A
Open collector
Collector current-peak
T
a
=25℃
2.0
W
30
150
-55~150
℃
℃
P
C
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-1mA ;R
BE
=∞
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-4A ;I
B
=-0.4A
V
CB
=-80V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-4A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
30
MIN
-80
-90
-6
2SB1455
TYP.
MAX
UNIT
V
V
V
-0.5
-0.1
-0.1
280
V
mA
mA
Switching times
t
on
t
s
t
f
电半
固
Turn-on time
Storage time
Fall time
Transition frequency
导½
HA
INC
R
100-200
S
ES
NG
I
C
=-2.0A I
B1
=-I
B2
=-0.2A
V
CC
=-50V ,R
L
=25Ω
MIC
E
OR
UCT
ND
O
20
0.2
0.7
0.2
MHz
μs
μs
μs
h
FE-1
Classifications
Q
70-140
140-280
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1455
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1455
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4