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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC5064-OTE85R
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2SC5064-OTE85R

Description
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size448KB，7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC5064-OTE85R Overview

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

2SC5064-OTE85R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.015 A
Collector-based maximum capacity0.9 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)7000 MHz
Base Number Matches1

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Download Datasheet
2SC5064
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5064
VHF~UHF Band Low Noise Amplifier Applications
•
•
Low noise figure, high gain.
NF = 1.1dB, |S
21e
|
2
= 12dB (f = 1 GHz)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
P
C
T
j
T
stg
Rating
20
12
3
15
30
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
―
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Microwave Characteristics
(Ta
=
25°C)
Characteristics
Transition frequency
Insertion gain
Symbol
f
T
⎪S
21e
⎪
(1)
⎪S
21e
⎪
(2)
NF (1)
NF (2)
2
2
Test Condition
V
CE
=
5 V, I
C
=
10 mA
V
CE
=
5 V, I
C
=
10 mA, f
=
500 MHz
V
CE
=
5 V, I
C
=
10 mA, f
=
1 GHz
V
CE
=
5 V, I
C
=
3 mA, f
=
500 MHz
V
CE
=
5 V, I
C
=
3 mA, f
=
1 GHz
Min
5
⎯
8.5
⎯
⎯
Typ.
7
17
12
1
1.1
Max
⎯
⎯
⎯
⎯
2.0
Unit
GHz
dB
Noise figure
dB
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note 1)
C
ob
C
re
Test Condition
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 mA
V
CB
=
5 V, I
E
=
0, f
=
1 MHz
Min
⎯
⎯
80
⎯
⎯
Typ.
⎯
⎯
⎯
0.7
0.45
Max
1
1
240
⎯
0.9
pF
pF
Unit
μA
μA
(Note 2)
Note 1: h
FE
classification O: 80~160, Y: 120~240
Note 2: C
re
is measured by 3 terminal method with capacitance bridge.
1
2007-11-01

2SC5064-OTE85R Related Products

2SC5064-OTE85R 2SC5064-Y 2SC5064-O 2SC5064TE85L 2SC5064TE85R 2SC5064-OTE85L SSFD3005 2SC5064-YTE85L
Description TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP RF Small Signal TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP RF Small Signal TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal 30V P-Channel MOSFET TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead - Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible - incompatible
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow unknow unknow unknow unknow - unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE - LOW NOISE
Maximum collector current (IC) 0.015 A 0.03 A 0.03 A 0.015 A 0.015 A 0.015 A - 0.015 A
Collector-based maximum capacity 0.9 pF 0.9 pF 0.9 pF 0.9 pF 0.9 pF 0.9 pF - 0.9 pF
Collector-emitter maximum voltage 12 V 12 V 12 V 12 V 12 V 12 V - 12 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
Minimum DC current gain (hFE) 80 120 80 80 80 80 - 120
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND - ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3
JESD-609 code e0 e0 e0 e0 e0 e0 - e0
Number of components 1 1 1 1 1 1 - 1
Number of terminals 3 3 3 3 3 3 - 3
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C - 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240 240 240 240 240 - 240
Polarity/channel type NPN NPN NPN NPN NPN NPN - NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
surface mount YES YES YES YES YES YES - YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD - TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING - GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER - AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON - SILICON
Nominal transition frequency (fT) 7000 MHz 7000 MHz 7000 MHz 7000 MHz 7000 MHz 7000 MHz - 7000 MHz
Base Number Matches 1 1 1 1 1 1 - 1

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