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2SB816-E

Description
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size57KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SB816-E Overview

Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

2SB816-E Parametric

Parameter NameAttribute value
Objectid1999663418
Parts packaging codeTO-3PB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BALLAST RESISTANCE
Maximum collector current (IC)8 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)80 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Ordering number:ENN677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output
Large Power Switching Applications
Features
· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
· Wide ASO because of built-in ballast resistance.
· Goode dependence of f
T
on current and good HF
characteristic.
Package Dimensions
unit:mm
2022A
[2SB816/2SD1046]
3.5
15.6
14.0
2.6
3.2
4.8
2.0
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.3
1.2
15.0
20.0
( ) : 2SB816
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Conditions
1.4
Ratings
(–)150
(–)120
(–)6
(–)8
(–)12
80
150
–40 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)1A
VCE=(–)5V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
VCB=(–)10V, f=1MHz
60*
20
15
(220)
160
MHz
pF
pF
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
200*
Unit
mA
mA
* : The 2SB816/2SD1046 are classified by 1A h
FE
as follows :
Rank
hFE
D
60 to 120
E
100 to 200
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/4017KI/6284KI, MT No.677–1/4

2SB816-E Related Products

2SB816-E 2SB816-D 2SB816D 2SB816E 2SD1046D 2SD1046-D 2SD1046E 2SD1046-E
Description Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN 8A, 120V, PNP, Si, POWER TRANSISTOR, TO-3PB, 3 PIN 8A, 120V, PNP, Si, POWER TRANSISTOR, TO-3PB, 3 PIN 8A, 120V, PNP, Si, POWER TRANSISTOR, TO-3PB, 3 PIN 8A, 120V, NPN, Si, POWER TRANSISTOR, TO-3PB, 3 PIN Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN 8A, 120V, NPN, Si, POWER TRANSISTOR, TO-3PB, 3 PIN Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
Parts packaging code TO-3PB TO-3PB TO-3PB TO-3PB TO-3PB TO-3PB TO-3PB TO-3PB
package instruction FLANGE MOUNT, R-PSFM-T3 TO-3PB, 3 PIN TO-3PB, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknow unknown unknow
Other features BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE BUILT-IN BALLAST RESISTANCE
Maximum collector current (IC) 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Collector-emitter maximum voltage 120 V 120 V 120 V 120 V 120 V 120 V 120 V 120 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 60 100 60 60 100 100
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 140 °C 140 °C 140 °C 140 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP PNP PNP NPN NPN NPN NPN
Maximum power dissipation(Abs) 80 W 80 W 80 W 80 W 80 W 80 W 80 W 80 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz
Objectid 1999663418 1483103858 1483103858 1483103865 1483104449 - 1483104453 -

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