2SD1046D datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SD1046D

2SD1046D: Description8A, 120V, NPN, Si, POWER TRANSISTOR, TO-3PB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size57KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

Download Datasheet Parametric Compare View All

2SD1046D Overview

8A, 120V, NPN, Si, POWER TRANSISTOR, TO-3PB, 3 PIN

2SD1046D Parametric

Parameter Name	Attribute value
Objectid	1483104449
Parts packaging code	TO-3PB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Other features	BUILT-IN BALLAST RESISTANCE
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	80 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	15 MHz

Preview

Download Datasheet

View All

Ordering number:ENN677D

PNP/NPN Epitaxial Planar Silicon Transistors

2SB816/2SD1046

For LF Power Amplifier, 50W Output

Large Power Switching Applications

Features

· Capable of being mounted easily because of one-

point fixing type plastic molded package (Inter-

changeable with TO-3).

· Wide ASO because of built-in ballast resistance.

· Goode dependence of f

on current and good HF

characteristic.

Package Dimensions

unit:mm

2022A

[2SB816/2SD1046]

3.5

15.6

14.0

2.6

3.2

4.8

2.0

1.6

2.0

20.0

0.6

1.0

0.6

1.3

1.2

15.0

20.0

( ) : 2SB816

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Tc=25˚C

5.45

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PB

Conditions

1.4

Ratings

(–)150

(–)120

(–)6

(–)8

(–)12

150

–40 to +150

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Symbol

ICBO

IEBO

hFE1

hFE2

Cob

VCB=(–)80V, IE=0

VEB=(–)4V, IC=0

VCE=(–)5V, IC=(–)1A

VCE=(–)5V, IC=(–)5A

VCE=(–)5V, IC=(–)1A

VCB=(–)10V, f=1MHz

60*

(220)

160

MHz

Conditions

Ratings

min

typ

max

(–)0.1

200*

Unit

* : The 2SB816/2SD1046 are classified by 1A h

as follows :

Rank

hFE

60 to 120

100 to 200

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91003TN (KT)/91098HA (KT)/4017KI/6284KI, MT No.677–1/4

2SD1046D Related Products

	2SD1046D	2SB816-D	2SB816D	2SB816-E	2SB816E	2SD1046-D	2SD1046E	2SD1046-E
Description	8A, 120V, NPN, Si, POWER TRANSISTOR, TO-3PB, 3 PIN	8A, 120V, PNP, Si, POWER TRANSISTOR, TO-3PB, 3 PIN	8A, 120V, PNP, Si, POWER TRANSISTOR, TO-3PB, 3 PIN	Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN	8A, 120V, PNP, Si, POWER TRANSISTOR, TO-3PB, 3 PIN	Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN	8A, 120V, NPN, Si, POWER TRANSISTOR, TO-3PB, 3 PIN	Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
Parts packaging code	TO-3PB	TO-3PB	TO-3PB	TO-3PB	TO-3PB	TO-3PB	TO-3PB	TO-3PB
package instruction	FLANGE MOUNT, R-PSFM-T3	TO-3PB, 3 PIN	TO-3PB, 3 PIN	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow	unknown	unknow
Other features	BUILT-IN BALLAST RESISTANCE	BUILT-IN BALLAST RESISTANCE	BUILT-IN BALLAST RESISTANCE	BUILT-IN BALLAST RESISTANCE	BUILT-IN BALLAST RESISTANCE	BUILT-IN BALLAST RESISTANCE	BUILT-IN BALLAST RESISTANCE	BUILT-IN BALLAST RESISTANCE
Maximum collector current (IC)	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	120 V	120 V	120 V	120 V	120 V	120 V	120 V	120 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	60	60	100	100	60	100	100
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	140 °C	140 °C	140 °C	140 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	PNP	PNP	PNP	PNP	NPN	NPN	NPN
Maximum power dissipation(Abs)	80 W	80 W	80 W	80 W	80 W	80 W	80 W	80 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz	15 MHz
Objectid	1483104449	1483103858	1483103858	1999663418	1483103865	-	1483104453	-

Recommended Resources

One of the forward and reverse circuits of DC motor armature connected with resistor in series to start reverse braking

Soil moisture meter circuit

Walkman fast charger

Rice cooker circuit drawing 5_automatic heat preservation

HT6337 (electric fan) infrared remote control receiving and decoding circuit

SCALE driver wiring diagram

Some questions about digital reversing radar: What are the functional differences between digital reversing radar and analog reversing radar? Which one is better in terms of stability, measurement distance, accuracy, and anti-interference?...; wzzhc Automotive Electronics

Amazon will release a smartphone with 6 cameras next year!: [color=rgb(51, 51, 51)][font=SimSun]Original title: Amazon will release a smartphone with 6 cameras next year![/font][/color] [p=25, null, center][color=rgb(51, 51, 51)][font=宋体][img]http://www.people...; wangfuchong Talking

BLE Bluetooth data packet processing: [p=26, null, left][color=#000][font=Arial][size=14px]1. First, let me explain the background of this document: [/size][/font][/color][/p][p=26, null, left][color=#000][font=Arial][size=14px]Because a ...; fish001 Wireless Connectivity

Urgent!! VxWorks serial communication problem: Background of the problem: I wrote a WIN32 program for reading and writing serial ports on the PC to receive and parse the serial port output of vxworks. If the parsed serial port data is consistent w...; 王增 Real-time operating system RTOS

Mine and Wave Measurement System Based on Single Chip Microcomputer: Haha, I found this in a technology forum before. It seems that single-chip microcomputers are very important for military equipment. A strong single-chip microcomputer means a strong army! If you have...; zxpla MCU

2011 TI C2000 Series Latest Technology Seminar! Waiting for you to attend! (From now until December 20): Participate in TI C2000 series technical training for free and have the opportunity to trade in old MCU development tools for new ones (10/31 - 12/20, 10 -city tour registration is now open )C2000 dev...; EEWORLD社区 Microcontroller MCU

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components