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2SD1445PQ

Description
Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size192KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SD1445PQ Overview

Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN

2SD1445PQ Parametric

Parameter NameAttribute value
Parts packaging codeTO-220F
package instructionTO-220F, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)10 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
Power Transistors
2SD1445, 2SD1445A
Silicon NPN epitaxial planar type
0.7
±0.1
For power amplification, power switching and low-voltage switching
Complementary to 2SB0948 and 2SB0948A
I
Features
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one
screw
16.7
±0.3
Unit: mm
10.0
±0.2
5.5
±0.2
4.2
±0.2
2.7
±0.2
7.5
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
Solder Dip
(4.0)
14.0
±0.5
φ
3.1
±0.1
4.2
±0.2
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Collector to base
voltage
Collector to
emitter voltage
2SD1445
40
Rating
2SD1445A
2SD1445
2SD1445A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
T
C
= 25°C
T
a
= 25°C
Junction temperature
Storage temperature
T
stg
−55
to
+150
tin
Parameter
Symbol
I
CBO
I
EBO
ue
di
I
Electrical Characteristics
T
C
=
25°C
Collector cutoff
current
2SD1445A
isc
on
2SD1445
Forward current transfer ratio
Ma
int
en
Collector to emitter
voltage
an
2SD1445
ce
Emitter cutoff current
V
CEO
h
FE1
h
FE2 *
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
2SD1445A
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Note) *: Rank classification
Rank
h
FE2
Q
90 to 180
Pl
P
130 to 260
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.
0.8
±0.1
Unit
V
2.54
±0.3
5.08
±0.5
50
20
V
1 2 3
40
5
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
V
20
10
40
2
A
A
W
150
°C
°C
Conditions
Min
Typ
Max
50
50
50
Unit
µA
V
CB
= 40 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CB
= 50 V, I
E
= 0
I
C
= 10 mA, I
B
= 0
/D
µA
V
20
40
V
CE
= 2 V, I
C
= 0.1 A
V
CE
= 2 V, I
C
= 3 A
45
90
260
0.6
1.5
I
C
= 10 A, I
B
= 0.33 A
I
C
= 10 A, I
B
= 0.33 A
V
V
V
CE
= 10 V, I
C
= 0.5 A, f = 10 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
I
C
= 3 A, I
B1
= 0.1 A, I
B2
=
0.1 A,
V
CC
= 20 V
120
200
0.3
0.4
0.1
MHz
pF
µs
µs
µs
Ordering can be made by the common rank (PQ rank h
FE2
= 90 to 260) in the
rank classification. (2SD1445A only)
305

2SD1445PQ Related Products

2SD1445PQ 2SD1445Q 2SD1445APQ 2SD1445P
Description Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN
Parts packaging code TO-220F TO-220FA1 TO-220F TO-220FA1
package instruction TO-220F, 3 PIN SC-67, TO-220F-A1, 3 PIN TO-220F, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 10 A 10 A 10 A 10 A
Collector-emitter maximum voltage 20 V 20 V 40 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 90 90 90 130
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz
Base Number Matches 1 1 1 1
Maximum operating temperature - 150 °C 150 °C 150 °C
Maximum power dissipation(Abs) - 40 W 40 W 40 W

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