EEWORLDEEWORLDEEWORLD

Part Number

Search

2SD1445P

Description
Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size192KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SD1445P Overview

Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN

2SD1445P Parametric

Parameter NameAttribute value
Parts packaging codeTO-220FA1
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)10 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)130
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
Power Transistors
2SD1445, 2SD1445A
Silicon NPN epitaxial planar type
0.7
±0.1
For power amplification, power switching and low-voltage switching
Complementary to 2SB0948 and 2SB0948A
I
Features
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one
screw
16.7
±0.3
Unit: mm
10.0
±0.2
5.5
±0.2
4.2
±0.2
2.7
±0.2
7.5
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
Solder Dip
(4.0)
14.0
±0.5
φ
3.1
±0.1
4.2
±0.2
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Collector to base
voltage
Collector to
emitter voltage
2SD1445
40
Rating
2SD1445A
2SD1445
2SD1445A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
T
C
= 25°C
T
a
= 25°C
Junction temperature
Storage temperature
T
stg
−55
to
+150
tin
Parameter
Symbol
I
CBO
I
EBO
ue
di
I
Electrical Characteristics
T
C
=
25°C
Collector cutoff
current
2SD1445A
isc
on
2SD1445
Forward current transfer ratio
Ma
int
en
Collector to emitter
voltage
an
2SD1445
ce
Emitter cutoff current
V
CEO
h
FE1
h
FE2 *
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
2SD1445A
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Note) *: Rank classification
Rank
h
FE2
Q
90 to 180
Pl
P
130 to 260
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0.8
±0.1
Unit
V
2.54
±0.3
5.08
±0.5
50
20
V
1 2 3
40
5
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
V
20
10
40
2
A
A
W
150
°C
°C
Conditions
Min
Typ
Max
50
50
50
Unit
µA
V
CB
= 40 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CB
= 50 V, I
E
= 0
I
C
= 10 mA, I
B
= 0
/D
µA
V
20
40
V
CE
= 2 V, I
C
= 0.1 A
V
CE
= 2 V, I
C
= 3 A
45
90
260
0.6
1.5
I
C
= 10 A, I
B
= 0.33 A
I
C
= 10 A, I
B
= 0.33 A
V
V
V
CE
= 10 V, I
C
= 0.5 A, f = 10 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
I
C
= 3 A, I
B1
= 0.1 A, I
B2
=
0.1 A,
V
CC
= 20 V
120
200
0.3
0.4
0.1
MHz
pF
µs
µs
µs
Ordering can be made by the common rank (PQ rank h
FE2
= 90 to 260) in the
rank classification. (2SD1445A only)
305

2SD1445P Related Products

2SD1445P 2SD1445Q 2SD1445APQ 2SD1445PQ
Description Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN Power Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
Parts packaging code TO-220FA1 TO-220FA1 TO-220F TO-220F
package instruction FLANGE MOUNT, R-PSFM-T3 SC-67, TO-220F-A1, 3 PIN TO-220F, 3 PIN TO-220F, 3 PIN
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 10 A 10 A 10 A 10 A
Collector-emitter maximum voltage 20 V 20 V 40 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 130 90 90 90
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz
Base Number Matches 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C -
Maximum power dissipation(Abs) 40 W 40 W 40 W -
How to test the USB host port of CPU
I want to test the USB host interface of a board, but I don't want to connect a USB flash drive or mouse to it. Is there any other way? It seems that someone has used a mouse chip to configure the USB...
yunqing Analog electronics
[EETALk] What knowledge do I need to master as a Bluetooth engineer?
As a Bluetooth engineer, what are the general job functions? ? ? What knowledge do you need to master??? Is there any Bluetooth engineer in this forum? Or maybe you are working on Bluetooth, or more b...
okhxyyo RF/Wirelessly
The Basics of the Best Spectrum Analyzer
[align=left][color=rgb(62, 62, 62)][b]Preface[/b] Spectrum analysis is a fast method for observing and measuring signal amplitude and signal distortion. The display result can directly reflect the amp...
fish001 RF/Wirelessly
Could you please tell me what is wrong with the frequency measurement program of MSP430F5529?
#include#include "nokia_5110.h" //#include "systemclk.h" unsigned intnew_flag=0,old_flag=0; unsigned char N1=0; long time,pluse=0;void main(void) {WDTCTL = WDTPW + WDTHOLD;// Stop WDTP1DIR |= 0x01;// ...
望风年少 Microcontroller MCU
Please modify it
How to connect stm32 to display screen, how to save the data detected continuously through gpio port and display it on the screen, the following is the program I wrote, I don't know how to store the d...
731313511 ARM Technology
Crash safety of lithium-ion batteries for electric vehicles
When electric vehicles collide, the battery is prone to internal short circuit problems. How much deformation/force can a single battery withstand to reach internal short circuit? Vehicle damage cause...
alan000345 Automotive Electronics

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 641  1110  2906  1451  1416  13  23  59  30  29 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号