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2SK1152(L)

Description
Power Field-Effect Transistor, 1.5A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size49KB,9 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

2SK1152(L) Overview

Power Field-Effect Transistor, 1.5A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

2SK1152(L) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-252
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)1.5 A
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)6 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK1151(L)(S), 2SK1152(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
1
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2
3
2 3

2SK1152(L) Related Products

2SK1152(L) 2SK1151(L) 2SK1151(S) 2SK1152(S)
Description Power Field-Effect Transistor, 1.5A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Power Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Power Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 Power Field-Effect Transistor, 1.5A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2
Is it Rohs certified? incompatible incompatible conform to conform to
Parts packaging code TO-252 TO-252 TO-252 TO-252
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 450 V 450 V 500 V
Maximum drain current (Abs) (ID) 1.5 A 1.5 A 1.5 A 1.5 A
Maximum drain current (ID) 1.5 A 1.5 A 1.5 A 1.5 A
Maximum drain-source on-resistance 6 Ω 5.5 Ω 5.5 Ω 6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 3 3 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 20 W 20 W 20 W 20 W
Maximum pulsed drain current (IDM) 6 A 6 A 6 A 6 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES YES
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
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