2SK1151(S) datasheet, PDF - EEWORLD Datasheet

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2SK1151(S): DescriptionPower Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2; CategoryDiscrete semiconductor The transistor; File Size49KB，9 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/; Environmental Compliance

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2SK1151(S) Overview

Power Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2

2SK1151(S) Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknow
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	450 V
Maximum drain current (Abs) (ID)	1.5 A
Maximum drain current (ID)	1.5 A
Maximum drain-source on-resistance	5.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	20 W
Maximum pulsed drain current (IDM)	6 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK1151(L)(S), 2SK1152(L)(S)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

•

Low on-resistance

•

High speed switching

•

Low drive current

•

No secondary breakdown

•

Suitable for switching regulator and DC-DC converter

Outline

DPAK-1

1. Gate

2. Drain

3. Source

4. Drain

2 3

2SK1151(S) Related Products

	2SK1151(S)	2SK1151(L)	2SK1152(L)	2SK1152(S)
Description	Power Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2	Power Field-Effect Transistor, 1.5A I(D), 450V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3	Power Field-Effect Transistor, 1.5A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3	Power Field-Effect Transistor, 1.5A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2
Is it Rohs certified?	conform to	incompatible	incompatible	conform to
Parts packaging code	TO-252	TO-252	TO-252	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	450 V	450 V	500 V	500 V
Maximum drain current (Abs) (ID)	1.5 A	1.5 A	1.5 A	1.5 A
Maximum drain current (ID)	1.5 A	1.5 A	1.5 A	1.5 A
Maximum drain-source on-resistance	5.5 Ω	5.5 Ω	6 Ω	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	2	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	20 W	20 W	20 W	20 W
Maximum pulsed drain current (IDM)	6 A	6 A	6 A	6 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	YES
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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