Ordering number:ENN1029C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB927/2SD1247
Large-Current Driving Applications
Applications
· Power supplies, relay drivers, lamp drivers, electrical
equipment.
Package Dimensions
unit:mm
2006B
[2SB927/2SD1247]
6.0
5.0
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
0.5
0.6
4.7
6.0
14.0
3.0
8.5
0.5
0.5
1 2 3
( ) : 2SB927
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.45
1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
(–)30
(–)25
(–)6
(–)2.5
(–)5
1.0
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Common Base Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)20V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)0.1A
VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
100*
65
130
150
19(32)
MHz
pF
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
560*
Unit
µA
µA
* : The 2SB927/2SD1247 are classified by 0.1A h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/92098HA (KT)/4077KI/3075KI/1263KI, TS No.1029–1/3
2SB927/2SD1247
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
VCE(sat)
VBE(sat)
Conditions
IC=(–)1.5A, IB=(–)75mA
IC=(–)1.5A, IB=(–)75mA
Ratings
min
typ
0.18
(–0.35)
0.85
max
0.4
(–0.6)
1.2
Unit
V
V
V
--2.0
IC -- VCE
2SB927
From top
--200mA
--150mA
--100mA
--50mA
--40mA
--30mA
0m
A
--25
2.0
IC -- VCE
2SD1247
30
mA
40m
A
0m
--2
A
Collector Current, IC – A
1.6
20m
A
Collector Current, IC – A
--1.6
--1.2
1.2
50m
A
--10mA
--8mA
10mA
8mA
--6mA
--4mA
--2mA
6mA
0.8
--0.8
4mA
2mA
IB=0
0
200
400
600
800
1000
--0.4
0.4
0
0
--200
--400
--600
IB=0
--800
--1000
0
Collector-to-Emitter Voltage, VCE – mV
ITR08788
3.2
2.8
Collector-to-Emitter Voltage, VCE – mV
ITR08789
1000
7
5
IC -- VBE
VCE=2V
927
hFE -- IC
VCE=2V
Collector Current, IC – A
247
2SB
DC Current Gain, hFE
2.4
2.0
1.6
1.2
0.8
0.4
0
0
3
2
100
7
5
3
2
10
7
(For PNP,
5
2 3
0.01
2SD1247
(For PNP, minus sign is
omitted.)
0.2
0.4
0.6
0.8
1.0
1.2
ITR08790
2SD1
2SB927
minus sign is omitted.)
5
0.1
2
3
5
1.0
2
3
Base-to-Emitter Voltage, VBE – V
1000
Collector Current, IC – A
100
5
10
ITR08791
f T -- IC
VCE=10V
Output Capacitance, Cob -- pF
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, fT – MHz
7
5
3
2
7
2SD1247
5
2SB927
2SB
3
927
100
7
5
3
2
2SD
2
124
7
10
10
2
3
5
(For PNP, minus sign is omitted.)
7 100
2
3
5
7 1000
2
3
10
(For
1.0
PNP, minus sign is omitted.)
2
3
5
7
10
2
3
5
Collector Current, IC – mA
ITR08792
Collector-to-Base Voltage, VCB -- V
ITR08793
No.1029–2/3
2SB927/2SD1247
3
2
VCE(sat) -- IC
IC / IB=20
1200
PC -- Ta
2SB927 / 2SD1247
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
1.0
7
5
3
2
0.1
7
5
3
2
Collector Dissipation, P
C
– mW
5
7 1.0
2
3
5
1000
800
600
7
92
SB
247
2
1
D
2S
400
200
0.01
0.01
(For PNP, minus sign is omitted.)
2
3
5
0
0
20
40
60
80
100
120
140
160
180
Collector Current, IC – mA
7 0.1
2
3
ITR08794
Ambient Temperature, Ta – ˚C
ITR08795
10
ASO
ICP=5A
5
Collector Current, IC – A
3
2
10
IC=2.5A
DC
op
10
m
1m
s
0m
s
s
1.0
5
3
2
era
tio
n
0.1
5
3
2
2
2SB927 / 2SD1247
(For PNP, minus sign is omitted.)
1ms to 100ms : Single pulse
Ta=25°C
3
5
7
Collector-to-Emitter Voltage, VCE – V
ITR08796
1.0
2
3
5
7
10
2
3
5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.1029–3/3
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