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2SD1802S(TP)

Description
TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-251VAR
CategoryDiscrete semiconductor    The transistor   
File Size45KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SD1802S(TP) Overview

TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-251VAR

2SD1802S(TP) Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)140
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
surface mountNO
Base Number Matches1
Ordering number:ENN2113B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1202/2SD1802
High-Current Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Package Dimensions
unit:mm
2045B
[2SB1202/2SD1802]
1.5
6.5
5.0
4
2.3
Features
· Adoption of FBET, MBIT processes.
· Large currrent capacity and wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small and slim package making it easy to make
2SB1202/2SD1802-used sets smaller.
0.5
0.85
0.7
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1202/2SD1802]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.5
0.8
2
3
2.5
1.2
0 to 0.2
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13004TN (KT)/92098HA (KT)/8259MO/4137KI/4116KI, TS No.2113–1/5

2SD1802S(TP) Related Products

2SD1802S(TP) 2SB1202U(TP) 2SB1202U(TP-FA) 2SD1802R(TP) 2SD1802R(TP-FA) 2SD1802T(TP-FA) 2SD1802U(TP-FA) 2SB1202T(TP-FA)
Description TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-251VAR TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-251VAR TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252VAR TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-251VAR TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252VAR TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252VAR TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252VAR TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252VAR
Reach Compliance Code compli compli compli compli compli compli compli compli
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Configuration Single Single Single Single Single Single Single Single
Minimum DC current gain (hFE) 140 280 280 100 100 200 280 200
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN PNP PNP NPN NPN NPN NPN PNP
Maximum power dissipation(Abs) 15 W 15 W 15 W 15 W 15 W 15 W 15 W 15 W
surface mount NO NO YES NO YES YES YES YES
Base Number Matches 1 1 1 1 1 1 1 1
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