2SD1802T(TP-FA) datasheet, PDF

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2SD1802T(TP-FA): DescriptionTRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252VAR; CategoryDiscrete semiconductor The transistor; File Size45KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2SD1802T(TP-FA) Overview

TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252VAR

2SD1802T(TP-FA) Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
Maximum collector current (IC)	3 A
Configuration	Single
Minimum DC current gain (hFE)	200
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	15 W
surface mount	YES
Base Number Matches	1

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Ordering number:ENN2113B

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1202/2SD1802

High-Current Switching Applications

Applications

· Voltage regulators, relay drivers, lamp drivers,

electrical equipment.

Package Dimensions

unit:mm

2045B

[2SB1202/2SD1802]

1.5

6.5

5.0

2.3

Features

· Adoption of FBET, MBIT processes.

· Large currrent capacity and wide ASO.

· Low collector-to-emitter saturation voltage.

· Fast switching speed.

· Small and slim package making it easy to make

2SB1202/2SD1802-used sets smaller.

0.5

0.85

0.7

5.5

7.0

0.8

1.6

1.2

0.6

7.5

0.5

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

unit:mm

2044B

[2SB1202/2SD1802]

6.5

5.0

2.3

1.5

0.5

5.5

7.0

0.85

0.6

0.5

0.8

2.5

1.2

0 to 0.2

1.2

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

13004TN (KT)/92098HA (KT)/8259MO/4137KI/4116KI, TS No.2113–1/5

2SD1802T(TP-FA) Related Products

	2SD1802T(TP-FA)	2SB1202U(TP)	2SB1202U(TP-FA)	2SD1802R(TP)	2SD1802R(TP-FA)	2SD1802S(TP)	2SD1802U(TP-FA)	2SB1202T(TP-FA)
Description	TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252VAR	TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-251VAR	TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252VAR	TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-251VAR	TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252VAR	TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-251VAR	TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252VAR	TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252VAR
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli
Maximum collector current (IC)	3 A	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Configuration	Single	Single	Single	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	200	280	280	100	100	140	280	200
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	PNP	PNP	NPN	NPN	NPN	NPN	PNP
Maximum power dissipation(Abs)	15 W	15 W	15 W	15 W	15 W	15 W	15 W	15 W
surface mount	YES	NO	YES	NO	YES	NO	YES	YES
Base Number Matches	1	1	1	1	1	1	1	1

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