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2SC752(G)TM-Y

Description
TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size700KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC752(G)TM-Y Overview

TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

2SC752(G)TM-Y Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)100 ns
Base Number Matches1
2SC752(G)TM
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC752(G)TM
Ultra High Speed Switching Applications
Computer, Counter Applications
High transition frequency: f
T
= 400 MHz (typ.)
Low saturation voltage: V
CE (sat)
= 0.3 V (max)
High speed switching time: t
stg
= 15 ns (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
15
5
200
40
400
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
TO-92
temperature, etc.) may cause this product to decrease in the
JEITA
SC-43
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5F1B
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
I
CBO
I
EBO
h
FE (1)
(Note)
h
FE (2)
V
CE (sat)
V
BE (sat)
f
T
C
ob
t
on
Test Condition
V
CB
=
40 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
1 V, I
C
=
10 mA
V
CE
=
1 V, I
C
=
100 mA
I
C
=
20 mA, I
B
=
1 mA
I
C
=
20 mA, I
B
=
1 mA
V
CE
=
10 V, I
C
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
40
20
200
Typ.
400
4
70
Max
0.1
0.1
240
0.3
1.0
6
100
V
V
MHz
pF
Unit
μA
μA
Switching time
Storage time
t
stg
15
30
ns
Fall time
t
f
Duty cycle
<
2%
=
30
70
Note: h
FE
classification R: 40~80, O: 70~140, Y: 120~240
1
2007-11-01

2SC752(G)TM-Y Related Products

2SC752(G)TM-Y 2SC752(G)TM-O 2SC752(G)TM-R
Description TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 15 V 15 V 15 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 70 40
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 400 MHz 400 MHz 400 MHz
Maximum off time (toff) 100 ns 100 ns 100 ns
Maximum opening time (tons) 100 ns 100 ns 100 ns
Base Number Matches 1 1 1
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