Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
1.5±0.1
8.5±0.2
6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s
Features
q
q
M
Di ain
sc te
on na
tin nc
ue e/
d
1.5max.
10.5min.
Wide area of safe operation (ASO)
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
60
80
60
80
8
6
4
1
10.0±0.3
1.1max.
2.0
0.8±0.1
0.5max.
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Collector to
2SD1251
2.54±0.3
Ratings
Unit
V
5.08±0.5
2
1
3
Collector to
2SD1251
emitter voltage 2SD1251A
Emitter to base voltage
Peak collector current
Collector current
Base current
ea
s
ht e v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
V
V
A
A
A
8.5±0.2
6.0±0.3
3.4±0.3
1.0±0.1
10.0±0.3
1.5
–0.4
4.4±0.5
2.0
3.0
–0.2
+0.4
+0
base voltage
2SD1251A
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
30
0.8±0.1
R0.5
R0.5
1.3
W
2.54±0.3
0 to 0.4
1.1 max.
5.08±0.5
150
˚C
˚C
T
stg
–55 to +150
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
(T
C
=25˚C)
Symbol
Conditions
min
typ
max
30
1
4.4±0.5
Unit
µA
I
CBO
I
EBO
V
CB
= 20V, I
E
= 0
V
EB
= 8V, I
C
= 0
mA
V
2SD1251
2SD1251A
V
CEO(sus)*2
h
FE1
V
BE
V
CE(sat)
f
T
I
C
= 0.2A, L = 25mH
V
CE
= 3V, I
C
= 0.1A
V
CE
= 3V, I
C
= 1A
V
CE
= 3V, I
C
= 1A
I
C
= 2A, I
B
= 0.4A
60
80
40
30
Forward current transfer ratio
Base to emitter voltage
Pl
h
FE2*1
160
1.2
1
V
V
MHz
Collector to emitter saturation voltage
Transition frequency
*1
h
FE2
V
CE
= 10V, I
C
= 0.2A, f = 0.5MHz
*2
V
CEO(sus)
1
Rank classification
Q
30 to 60
P
50 to 100
O
80 to 160
Test circuit
X I
C
(A)
0.2
L 25mH
Rank
h
FE2
50/60Hz mercury relay
120Ω
6V
Y
1Ω
15V
G
0.1
60/80
V
CE
(V)
Note: Ordering can be made by the common rank (OP rank h
FE2
= 50 to 160) in the rank classification.
14.7±0.5
1
Power Transistors
P
C
— Ta
50
2.4
(1) T
C
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
T
C
=25˚C
2.0
I
B
=35mA
30mA
1..6
25mA
20mA
15mA
1.2
10mA
0.8
2SD1251, 2SD1251A
I
C
— V
CE
3.2
25˚C
2.8
T
C
=100˚C
–25˚C
V
CE
=3V
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
Collector current I
C
(A)
40
2.4
2.0
1.6
1.2
0.8
0.4
0
30
20
M
Di ain
sc te
on na
tin nc
ue e/
d
5mA
10
0.4
(2)
(3)
0
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
30
10
3000
3
1
1000
300
100
T
C
=100˚C
25˚C
Collector output capacitance C
ob
(pF)
Forward current transfer ratio h
FE
I
C
/I
B
=5
T
C
=25˚C
T
C
=100˚C
0.3
0.1
25˚C
–25˚C
0.03
0.01
0.01
0.03
0.1
0.3
1
ea
s
ht e v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
h
FE
— I
C
C
ob
— V
CB
10000
10000
V
CE
=3V
3000
1000
300
100
30
10
3
–25˚C
30
10
3
3
1
0.01 0.03
0.1
0.3
1
3
10
1
0.1
0.3
1
3
10
30
I
E
=0
f=1MHz
T
C
=25˚C
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
Area of safe operation (ASO)
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
100
30
10
3
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
10 I
CP
3 I
C
1
t=5ms
10ms
300ms
Pl
2SD1251A
2SD1251
10
0.3
0.1
0.03
0.01
1
3
10
30
1
10
–1
100
300
1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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