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2N5805

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size117KB,3 Pages
ManufacturerInchange Semiconductor
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2N5805 Overview

Transistor

2N5805 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Maximum collector current (IC)5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)110 W
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
VCEsat-Max1 V
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
breakdown voltage
APPLICATIONS
・Switching
regulator
・Inverters
・Solenoid
and relay drivers
・Motor
controls
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5804 2N5805
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
固电
IN
导½
ES
G
2N5805
2N5804
2N5805
2N5804
Open base
CONDITIONS
V
CBO
Collector-base voltage
Open emitter
V
CEO
Collector-emitter voltage
HAN
C
MIC
E
OR
UCT
ND
O
VALUE
300
375
225
300
6
5
UNIT
V
V
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total Power Dissipation
Open collector
V
A
W
T
C
=25℃
110
150
-65~200
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W

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2N5805 2N5804
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Reach Compliance Code unknow unknow
Base Number Matches 1 1
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