Preliminary
PJ9926A
Dual N-Channel MOSFET-ESD Protected
A
dvanced
trench process technology Specially
TSSOP-8
SOP-8
designed for Li-ion battery packs and battery
switch applications TSSOP-8 and SOP-8 package
FEATURES
VDS=20V
RDS(ON),Vgs@4.5V=22mΩ
RDS(ON),Vgs@3.5V=23mΩ
RDS(ON),Vgs@2.5V=29mΩ
ID=6.5A
ESD PROTECTION
Pin
1. Drain
5.Gate 2
2. Source1 6.Source2
3. Source1 7.Source2
4. Gate1
8.Drain
Pin
1. Source 2
2. Gate 2
3. Source 1
4. Gate 1
5. Drain 1
6. Drain 1
7. Drain 2
8. Drain 2
APPLICATIONS
Battery protection
Load switch
Power management
ORDERING INFORMATION
Device
PJ9926ACA
PJ9926ACS
Operating Temperature
-20 ~ 85
℃
Package
TSSOP-8
SOP-8
BLOCK DIAGRAM
PJ9926A
TSSOP-8
SOP-8
Pin 1 = D
Pin 2 = S 1
Pin 3 = S 1
Pin 4 = G 1
Pin 5 = G 2
Pin 6 = S 2
Pin 7 = S 2
Pin 8 = D
Pin 1 = S 2
Pin 2 = G 2
Pin 3 = S 1
Pin 4 = G 1
Pin 5 = D 1
Pin 6 = D 1
Pin 7 = D 2
Pin 8 = D 2
1-4
2003/04.rev.A
Preliminary
PJ9926A
Dual N-Channel MOSFET-ESD Protected
Maximum Ratings and Thermal Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
T
A
=25℃
T
A
=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J,
T
STG
T
L
R
θJF
R
θJA
35
83
Limit
20
±12
6.5
30
1.5
0.96
-55 to 150
Unit
V
A
W
℃
℃/W
Operating Junction and Storage Temperature Range
Lead Temperature (1/8” from case for 5 sec.)
Junction-to-Foot(Drain) Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)
Note:
1. Surface mounted on FR4 board t<=10sec.
ELECTRICAL CHARACTERISTICS
PJ9926A(rated I
D
=6.5A)
Parameter
Static Characteristics
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
On Characteristics (Note)
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Forward Transconductance
Switching Characteristics (Note)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V, I
D
=6.5A
V
GS
=4.5V
—
—
—
—
—
—
—
15.5
2
3.5
0.45
0.65
4.5
1.7
30
—
—
0.6
0.85
6
2.2
us
nC
V
GS(th)
I
DSS
I
GSS
I
D(on)
g
fs
V
DS
=V
GS
, I
D
=250uA
V
DS
=20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
V
DS
≥5V,
V
GS
=4.5V
V
DS
=10V, I
D
=6.5A
0.6
—
—
30
—
0.85
—
—
—
30
—
1
±10
—
—
V
uA
uA
A
S
BV
DSS
R
DS(on)
R
DS(on)
R
DS(on)
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=6.5A
V
GS
=3.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.5A
20
—
—
—
—
15
17.0
20.0
—
22
23
29
mΩ
V
Symbol
Test Condition
Min
Typ
Max
Unit
V
DD
=10V, R
L
=10Ω
I
D
=1A, V
GEN
=4.5V
R
G
=6Ω
2-4
2003/04.rev.A
Preliminary
PJ9926A
Dual N-Channel MOSFET-ESD Protected
ELECTRICAL CHARACTERISTICS
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
=10V, V
GS
=0V
f = 1.0MHZ
—
—
—
1360
220
130
—
—
—
pF
Source-Drain Diode Characteristics and Maximum Ratings
Max. Diode Forward Current
Diode Forward Voltage
I
S
V
SD
I
s
=1.5A, V
GS
=0V
—
—
—
0.61
1.5
1.2
A
V
Note:
Pulse test: pulse width < = 300us, duty cycle < = 2%
SWITCHING TEST CIRCUIT
SWITCHING WAVEFORMS
3-4
2003/04.rev.A
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