Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
9.9
±0.3
Unit: mm
4.6
±0.2
2.9
±0.2
3.0
±0.5
■
Features
•
High forward current transfer ratio h
FE
which has satisfactory lin-
earity
•
Low collector-emitter saturation voltage V
CE(sat)
•
Full-pack package which can be installed to the heat sink with one
screw
15.0
±0.5
φ
3.2
±0.1
13.7
±0.2
4.2
±0.2
Solder Dip
1.4
±0.2
1.6
±0.2
0.8
±0.1
2.6
±0.1
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
a
=
25°C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
80
80
6
3
5
20
2.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
0.55
±0.15
2.54
±0.30
5.08
±0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-emitter cutoff current (E-B short)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
V
BE
I
CES
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
30 mA, I
B
=
0
V
CE
=
4 V, I
C
=
3 A
V
CE
=
70 V, V
BE
=
0
V
CE
=
70 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
I
C
=
1 A, I
B1
=
0.1 A, I
B2
= −
0.1 A
V
CC
=
50 V
30
0.5
4.5
0.5
70
10
0.7
V
MHz
µs
µs
µs
Min
80
1.8
100
100
1
250
Typ
Max
Unit
V
V
µA
µA
mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
70 to 150
P
120 to 250
Publication date: April 2003
SJD00276BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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