Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
9.9
±0.3
Unit: mm
4.6
±0.2
2.9
±0.2
3.0
±0.5
■
Features
•
High forward current transfer ratio h
FE
which has satisfactory lin-
earity
•
Low collector-emitter saturation voltage V
CE(sat)
•
Full-pack package which can be installed to the heat sink with one
screw
15.0
±0.5
φ
3.2
±0.1
13.7
±0.2
4.2
±0.2
Solder Dip
1.4
±0.2
1.6
±0.2
0.8
±0.1
2.6
±0.1
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
a
=
25°C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
80
80
6
3
5
20
2.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
0.55
±0.15
2.54
±0.30
5.08
±0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-emitter cutoff current (E-B short)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
V
BE
I
CES
I
CEO
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
30 mA, I
B
=
0
V
CE
=
4 V, I
C
=
3 A
V
CE
=
70 V, V
BE
=
0
V
CE
=
70 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
I
C
=
1 A, I
B1
=
0.1 A, I
B2
= −
0.1 A
V
CC
=
50 V
30
0.5
4.5
0.5
70
10
0.7
V
MHz
µs
µs
µs
Min
80
1.8
100
100
1
250
Typ
Max
Unit
V
V
µA
µA
mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
70 to 150
P
120 to 250
Publication date: April 2003
SJD00276BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL
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