Ordering number:ENN2811
NPN Epitaxial Planar Silicon Transistor
2SC4452
High-Speed Switching Applications
Features
· High-speed switching.
· Low collector saturation voltage.
· High gain-bandwidth product.
· Small collector capacity.
· Ultrasmall package permitting applied sets to be
small and slim.
Package Dimensions
unit:mm
2059B
[2SC4452]
0.425
0.3
3
0 to 0.1
0.2
0.15
1.250
2.1
0.425
1
2
0.65 0.65
2.0
0.3
0.9
0.6
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Ratings
40
40
15
5
200
500
40
150
150
–55 to +150
Unit
V
V
V
V
mA
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
VCB=20V, IE=0
VEB=3V, IC=0
VCE=1V, IC=10mA
VCE=10V, IC=10mA
VCB=5V, f=1MHz
Rank
hF
E
2
50 to 100
3
70 to 140
4
100 to 200
Conditions
Ratings
min
typ
max
0.1
0.1
50*
450
90
750
1.4
4.0
200*
Unit
µA
µA
MHz
pF
* : The 2SC4452 is classified by 10mA h
FE
as follows :
Marking : ST
h
FE
rank : 2, 3, 4
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90204TN (PC)/D2598HA (KT)/O278MO, TS No.2811–1/4
2SC4452
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
IC=10mA, IB=1mA
IC=10mA, IB=1mA
40
15
5
8.0
6.0
12
Conditions
Ratings
min
typ
0.13
0.80
max
0.25
0.85
Unit
V
V
V
V
V
ns
ns
ns
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=1mA, RBE=∞
V(BR)EBO IE=10µA, IC=0
ton
tstg
tf
See specified test circuit.
See specified test circuit.
See specified test circuit.
t
on
, t
off
Test Circuit
VOUT
VIN
PW≥300ns
D.C.≤2%
50Ω
3.3kΩ
220Ω
3.3kΩ
0.0023µF 0.0023µF
0.005µF 0.005µF
0.1µF
Sampling oscilloscope
t
stg
Test Circuit
"A"
VIN
PW≥300ns
D.C.≤2%
0.1µF
500Ω
50Ω
0.0023µF 0.0023µF
500Ω
890Ω
0.1µF
VOUT
1kΩ
90Ω
Sampling oscilloscope
20
ITR06978
50Ω
+
+
10µF
11V
+
10µF
+
10V
0.1µF
VBB
0.1µF
+
3V
0
10%
VIN
10%
VIN
VIN
--10V
10% Waveforms at "A"
90%
VOUT
90%
VOUT
ton
VBB= --3V
VIN=+15V
toff
VBB=+12
VIN= --15V
tstg
10%
VOUT
0
240
IC -- VCE
24
IC -- VCE
160
µ
A
Collector Current, IC – mA
160
mA
3.0mA
3.5
2.5mA
2.0mA
Collector Current, IC – mA
200
20
140
µ
A
16
120
µ
A
100
µ
A
80µA
60µA
40µA
1.5mA
1.0mA
120
12
80
0.5mA
8
40
4
20µA
0
0
0.4
0.8
1.2
1.6
IB=0
2.0
ITR06977
0
0
4
8
12
IB=0
16
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
No.2811–2/4
2SC4452
5
3
2
hFE -- IC
VCE=1V
Gain-Bandwidth Product, fT – MHz
3
2
f T -- IC
VCE=10V
1000
7
5
3
2
DC Current Gain, hFE
100
7
5
3
2
Ta=75
°
C
25
°
C
--25
°
C
100
7
5
3
10
0.1
2
3
5
1.0
2
3
5
10
2
3
5
Collector Current, IC – mA
2
2
100
ITR06979
2
1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
2
7 100
2
ITR06980
Cib -- VEB
f=1MHz
Output Capacitance, Cob – pF
Cob -- VCB
f=1MHz
10
10
7
5
3
2
Input Capacitance, Cib – pF
7
5
3
2
1.0
7
5
3
2
0.1
2
3
5
7
1.0
2
3
5
10
ITR06981
7
1.0
7
5
3
2
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
ITR06982
Emitter-to-Base Voltage, VEB – V
1.0
7
Collector-to-Base Voltage, VCB – V
5
3
VCE(sat) -- IC
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
VBE(sat) -- IC
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
5
2
3
2
1.0
7
5
3
2
Ta= --25
°C
75
°
C
25
°
C
Ta= --25
°
C
0.1
7
5
25
°
C
75
°
C
3
0.1
2
3
5 7 1.0
2
3
5
7 10
2
3
Collector Current, IC – mA
100
7
5 7 100
ITR06983
0.1
0.1
2
3
5 7 1.0
2
3
5
7 10
2
3
Collector Current, IC – mA
160
140
5 7 100
ITR06984
SW Time -- IC
VCC=3V
IC=10IB1= --10IB2
Collector Dissipation, P
C
– mW
PC -- Ta
Switching Time, SW Time – ns
5
3
2
120
100
80
60
40
20
0
10
7
5
3
2
3
5
7
tstg
tf
tr
2
3
5
7
2
100
ITR06985
td
Collector Current, IC – mA
10
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR06986
No.2811–3/4
2SC4452
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2004. Specifications and information herein are
subject to change without notice.
PS No.2811–4/4
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